MPQ2222-TIN-LEAD vs MPQ2222 Comparison
Detailed side-by-side comparison of MPQ2222-TIN-LEAD by Central Semiconductor and MPQ2222 by Central Semiconductor. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Central Semiconductor
MPQ2222-TIN-LEAD - Quad NPN 40V 500mA BJT Array | Central Semiconductor
MPQ2222-TIN-LEAD β ActiveCentral Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 β ActiveSpecification Comparison
| Parameter | MPQ2222-TIN-LEAD | MPQ2222 |
|---|---|---|
| Brand | Central Semiconductor | Central Semiconductor |
| Category | Transistors | Transistors |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.54 | $0.39 |
| Transistor Configuration | Quad (4 independent NPN) | β |
| Transistor Type | NPN Bipolar Junction Transistor (BJT) | β |
| Collector-Emitter Voltage (VCEO) | 40 V | β |
| Collector-Base Voltage (VCBO) | 60 V | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] |
| Emitter-Base Voltage (VEBO) | 5.0 V | [DATA_NEEDED: VEBO exact value] |
| Collector Current (IC) | 500 mA | β |
| Power Dissipation | 650 mW | β |
| Transition Frequency (fT) | 200 MHz | 200 MHz |
| Package | TO-116, 14-pin DIP, Through Hole | 14-pin DIP (TO-116), Through Hole |
| Mounting Type | Through Hole | Through Hole |
| Plating Finish | Tin/Lead (order suffix TIN/LEAD) | β |
| Molding Compound | EMC GREEN, halogen-free | β |
| Application | General purpose amplifier and switching | β |
| Equivalent Base Type | Quad 2N2222-type | β |
| RoHS Status | Non-compliant (lead-containing tin/lead plating variant) | Lead-free (PB Free suffix version available) |
| Configuration | β | Quad NPN Transistor Array (4 independent devices) |
| Transistor Polarity | β | NPN Silicon |
| Collector-Emitter Voltage Rating | β | 40 V |
| Continuous Collector Current (per device) | β | 500 mA |
| Power Dissipation (total package) | β | 650 mW |
| Power Dissipation (per transistor) | β | [DATA_NEEDED: per-transistor dissipation value] |
| DC Current Gain (hFE) | β | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] |
| Operating and Storage Junction Temperature | β | [DATA_NEEDED: exact TJ range from datasheet] |
| Thermal Resistance (total package) | β | [DATA_NEEDED: thermal resistance value] |
| Marking | β | Full part number |