Samsung 176L (V7) 176-Layer 3D NAND Flash Node | Samsung
MPN: 176L ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.5 | $4.50 |
| 10 | $4.1 | $41.00 |
| 100 | $3.75 | $375.00 |
| 500 | $3.4 | $1,700.00 |
| 1,000 | $3.1 | $3,100.00 |
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View Datasheet →176L Maximum Ratings & Electrical Characteristics
| Technology Node | 176-layer 3D NAND (V7) |
| Manufacturer | Samsung Electronics |
| Memory Type | 3D NAND Flash (V-NAND) |
| Cell Type | Charge-trap flash, gate-all-around |
| Generations | TLC (3 bits/cell) and QLC (4 bits/cell) |
| Example TLC MPN | K9FGGY8J5A-CCK0 |
| Package | FBGA (ball-grid array), surface mount |
| Word-Line Structure | Vertical pillars, string stacking |
| Array Technique | Periphery-under-array |
| Predecessor Node | 128-layer V6 |
| Successor Node | 236-layer V8 |
| Primary Applications | SSD, eMMC, UFS, enterprise NVMe storage |
176L fbga (ball-grid array), surface mount Pin Configuration Guide
Complete pinout information for 176L (fbga (ball-grid array), surface mount package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for 176L.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
176L is suitable for 6 applications: Client and Consumer SSDs, Enterprise NVMe Storage, Mobile eMMC and UFS Embedded Storage, Cost-Optimized QLC SSDs, Industrial and Automotive Storage, Set-Top Boxes and Smart Home Hubs.
Client and Consumer SSDs
Samsung 176L TLC NAND is a mainstream choice for client SATA and NVMe SSDs because its periphery-under-array architecture raises array efficiency, letting more bits fit per die and lowering cost per gigabyte. In a typical design, the V7 TLC die connects to a four- or eight-channel NVMe controller via Toggle DDR interfaces, with SLC caching absorbing write bursts before folding to TLC. The 176L generation's higher layer count versus the 128L V6 node lets drive makers hit 1TB-plus capacities in fewer packages, saving PCB area and power. Firmware wear leveling must track the TLC P/E rating specified for the orderable MPN to meet the drive's TBW endurance target.
Recommended
Enterprise NVMe Storage
In enterprise NVMe drives, Samsung 176L TLC provides the balance of density, endurance, and power efficiency that datacenter workloads demand. Its charge-trap gate-all-around cells and string stacking deliver high bits-per-wafer economics, which matters when a single 15.36TB or 30.72TB drive needs hundreds of NAND packages. The TLC variant is preferred over QLC here because mixed read/write workloads and consistent tail latency require higher program/erase endurance and sustained-write stability. Designers combine 176L TLC with power-loss protection capacitors and controller-level ECC so that raw NAND error rates at end of life remain correctable within the controller's LDPC capability.
Recommended
Mobile eMMC and UFS Embedded Storage
Smartphones and tablets use Samsung 176L NAND inside eMMC and UFS packages, where the V7 node's bit density lets 128GB to 512GB capacities fit in the same package footprint as lower-generation designs. Because mobile devices are space- and power-constrained, the 176L generation's smaller die per bit reduces both package area and active read/write energy. Samsung combines the V7 die with a UFS controller in a fine-pitch BGA package for surface-mount assembly on the phone mainboard. Thermal management matters: sustained sequential writes are throttled by controller thermal policy, and QLC V7 variants are generally reserved for lower-cost storage tiers rather than the flagship UFS SKUs.
Recommended
Cost-Optimized QLC SSDs
Samsung 176L QLC targets read-dominant, cost-sensitive storage such as budget client SSDs, cold-data archiving, and content-delivery caches. Storing four bits per cell versus three for TLC raises bit density per die and lowers cost per gigabyte; per TechInsights, V7 QLC also adopts structural refinements similar to the 236L (V8) generation rather than being a simple TLC-to-QLC conversion. The trade-off is reduced program/erase endurance and tighter voltage margins, so successful designs rely on aggressive SLC caching, strong LDPC ECC, and wear-leveling firmware. For workloads dominated by sequential reads with infrequent full-drive rewrites, 176L QLC delivers the lowest dollars per terabyte.
Recommended
Industrial and Automotive Storage
Industrial gateways, edge servers, and telematics units use 176L-based storage where density and cost per bit dominate over extreme endurance. Samsung V7 TLC die integrated into industrial-grade eMMC or SSD modules provides wide-temperature operation and power-fail immunity managed at the module controller level. Because raw NAND P/E endurance at advanced nodes is lower than planar generations, industrial firmware must apply static wear leveling, over-provisioning of 7% or more, and SLC-mode metadata areas. Designers should qualify the specific orderable MPN for temperature grade and verify data-retention specifications at the maximum operating temperature before release.
Recommended
Set-Top Boxes and Smart Home Hubs
Set-top boxes, DVRs, and smart-home hubs use 176L-based eMMC storage for operating-system images and recorded media, where the V7 node's low cost per gigabyte enables larger local caches at consumer price points. Typical designs pair a mid-range SoC with 16GB to 128GB of eMMC built on V7 TLC die; random-read performance of the 176L generation is sufficient for 4K media streaming buffering. Power-cycling resilience is a key requirement: the module controller must guarantee filesystem consistency on abrupt power loss, typically via journaling plus capacitor-backed or firmware-managed flush strategies. Endurance demands are modest, making QLC or TLC V7 both viable depending on recording duty cycle.
Recommended
Recommended Products Summary
Engineering reference data for 176L — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K9FGGY8J5A-CCK0 | K9IUGY8J7B-CCK0 | K9PRGY8S7M-CCK0 |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | FBGA (V7 family) | FBGA | FBGA | FBGA |
| Technology Node | 176-layer (V7) | 176-layer (V7) | 176-layer (V7) | 176-layer (V7) |
| Cell Type | TLC / QLC charge-trap | TLC | TLC | TLC |
| Bits per Cell | 3 (TLC) / 4 (QLC) | 3 | 3 | 3 |
| Density | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Array Architecture | Periphery-under-array, string stacking | Periphery-under-array | Periphery-under-array | Periphery-under-array |
| Primary Application | SSD, eMMC, UFS, enterprise NVMe | SSD / eMMC / UFS | SSD / eMMC / UFS | SSD / eMMC / UFS |
Key Differentiators
- Higher bit density than the previous node (vs Samsung 128L (V6))
- Structural refinements shared with V8 (vs Samsung 176L (V7) TLC)
- TLC option preserves endurance (vs Samsung 176L QLC)
Design Notes
176L is a technology node, not an orderable component. BOMs must reference a concrete MPN such as K9FGGY8J5A-CCK0 (V7 TLC) together with its package and density code. Do not qualify '176L' generically: layer count alone does not fix die organization, ball map, ONFI/Toggle DDR timing, or P/E endurance, all of which differ between TLC and QLC variants and between density codes within the same V7 generation.
NAND die swaps between V7 variants or second sources require controller firmware and FTL requalification because timing registers, page organization, and supply-rail behavior differ. Plan for controller bring-up, endurance validation, and data-retention testing at maximum operating temperature before approving any alternate die, even within Samsung's own V7 family.
Estimated: sustained sequential writes on QLC variants generate the highest thermal load in packaged modules; design module thermal spreading (copper pours, thermal pads to the enclosure) so NAND junction temperature stays within the MPN datasheet limit, since retention and error rates degrade with temperature. Verify with thermocouple or IR measurement during write-heavy qualification runs.
Compliance Information
Compliance is declared per orderable MPN (e.g., K9FGGY8J5A-CCK0), not per technology node. Verify RoHS/REACH certificates for the specific purchased part via the distributor.
