IR2109STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
MPN: IR2109STRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.34 | $1.34 |
| 10 | $1.09 | $10.90 |
| 100 | $0.75 | $75.00 |
| 500 | $0.68 | $340.00 |
| 1,000 | $0.64 | $640.00 |
| 2,500 | $0.61 | $1,525.00 |
IR2109STRPBF Overview
A half-bridge gate driver is a specialized power-management IC that generates the high-side and low-side gate-drive signals required by a half-bridge switching stage. Positioned between a low-voltage PWM controller (such as a microcontroller or dedicated PWM IC) and the high-voltage switching transistors, the half-bridge driver level-shifts the low-side control logic to the floating high-side supply rail (referenced to the switching node VS) and provides the high peak currents needed to quickly charge and discharge the power-device gate capacitances. In the broader taxonomy, the IR2109STRPBF belongs to: gate driver IC -> power management IC -> semiconductor -> analog/mixed-signal IC. Half-bridge drivers are essential building blocks in switch-mode power supplies (SMPS), motor drives, class-D audio amplifiers, HID ballasts, and DC-DC converters.
Key specifications include a 600V offset voltage on the high-side section (allowing operation directly from rectified 110/220VAC or 400VDC bus rails), a wide VCC operating range of 10V to 20V, ±200mA peak source / ±350mA peak sink output current, 750ns typical propagation delay, 540ns matched ton/toff, built-in deadtime control, dV/dt immunity, and tolerance to negative VS transients. The integrated bootstrap diode eliminates the need for an external discrete bootstrap component, reducing BOM count and PCB footprint.
Architecturally, the IR2109STRPBF uses Infineon's high-voltage level-shifter and latch structure to transmit PWM signals across the high-side isolation barrier, with a floating supply (VB-VS) generated by the bootstrap capacitor refreshed through the internal diode on each low-side turn-on cycle. The matched source/sink drive strength (0.35A sink vs 0.2A source) is intentionally asymmetric to optimize for typical MOSFET turn-on (slower, source current) and turn-off (faster, sink current) behavior.
Typical applications include half-bridge and full-bridge motor drivers, synchronous-buck and synchronous-boost DC-DC converters, Class-D audio amplifiers, electronic ballasts for HID and fluorescent lighting, solar micro-inverters, and switched-mode power supplies (SMPS). When designing, the bootstrap capacitor value must be sized for the worst-case PWM duty cycle and switching frequency to prevent high-side UVLO triggering - a common pitfall when driving heavy gate-charge loads at high frequency.
Drop-in alternatives for IR2109STRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IR2109STRPBF (same form factor and footprint) — differing in Package, RoHS Status, Configuration, Input Logic Compatibility, Number of Outputs.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IR2109SPBF
✅ Drop-In✓ In Stock
$1.05 / Unit
View Datasheet →IR2304SPBF
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →IRS2003SPBF
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
L6391D
✅ Drop-In📋 Reference alternative (not in catalog)
L6393D
✅ Drop-In📋 Reference alternative (not in catalog)
NCP5106ADR2G
✅ Drop-In📋 Reference alternative (not in catalog)
IR2109STRPBF Maximum Ratings & Electrical Characteristics
| Product Type | Half-Bridge Gate Driver IC |
| Configuration | Half-Bridge (High-Side + Low-Side) |
| Number of Outputs | 2 (High-Side / Low-Side) |
| High-Side Offset Voltage (Max) | 600 V |
| Supply Voltage (VCC) | 10 V to 20 V |
| Peak Source Output Current | 0.2 A (typ) |
| Peak Sink Output Current | 0.35 A (typ) |
| Propagation Delay (typ) | 750 ns |
| ton / toff (typ) | 540 ns |
| Input Logic | Non-Inverting |
| UVLO | Yes (VCC and VBS) |
| Bootstrap Diode | Integrated |
| Dead Time Control | Built-in |
| dV/dt Immunity | Yes |
| Negative VS Transient Tolerance | Yes |
| Package | 8-SOIC (3.90 mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40 C to +125 C |
| RoHS Status | Compliant |
IR2109STRPBF Pin Configuration
| Pin 1 | VCC — Logic and low-side gate-drive supply (10-20V) |
| Pin 2 | IN — Logic input (HIN for high-side, LIN for low-side - single-input non-inverting configuration) |
| Pin 3 | GND — Logic and low-side return |
| Pin 4 | LO — Low-side gate-drive output (drives low-side MOSFET gate) |
| Pin 5 | VS — High-side floating supply return (switching node) |
| Pin 6 | VB — High-side floating supply (bootstrap rail referenced to VS) |
| Pin 7 | HO — High-side gate-drive output (drives high-side MOSFET gate) |
| Pin 8 | NC — Not connected (no internal bond) |
Typical Applications
IR2109STRPBF is suitable for 7 applications: Half-Bridge Switched-Mode Power Supply (SMPS), Brushless DC (BLDC) Motor Drive, Class-D Audio Amplifier, Electronic HID / Fluorescent Ballast, Solar Micro-Inverter / String Inverter, Industrial Half-Bridge Induction Heater, High-Voltage Synchronous Buck / Boost Converter.
Half-Bridge Switched-Mode Power Supply (SMPS)
The IR2109STRPBF is ideally suited to drive the high-side and low-side MOSFETs in a half-bridge SMPS topology, such as a 400V bus isolated DC-DC converter or a PFC front stage. Its 600V high-side offset voltage directly supports 400V rectified bus rails without external level shifting, while the 0.2A source / 0.35A sink drive currents comfortably switch medium-gate-charge MOSFETs at 50-200 kHz. The integrated bootstrap diode eliminates an external component, and the built-in deadtime control prevents shoot-through. For a 100W half-bridge converter, place a 1uF bootstrap capacitor and a 10uF VCC bypass near the IC, and size the bootstrap cap for the worst-case PWM duty cycle to prevent high-side UVLO triggering.
Recommended
Brushless DC (BLDC) Motor Drive
In a 3-phase BLDC motor drive, three IR2109STRPBF drivers handle the six power MOSFETs of the 3-phase inverter bridge, with each IC driving one half-bridge leg (high-side + low-side). The 600V rating covers industrial 400V DC bus drives for pumps, fans, and small traction motors. The 540ns matched ton/toff and built-in deadtime minimize cross-conduction losses and ensure clean commutation between phases. Designers should pair the IR2109STRPBF with a 3-phase PWM controller such as the IRS2336D or use a microcontroller with complementary PWM outputs and deadtime insertion.
Recommended
Class-D Audio Amplifier
The IR2109STRPBF drives the output half-bridge MOSFETs in Class-D audio amplifiers from 50W to 200W, where the 600V rating provides ample margin for ±50V audio supply rails. Its low propagation delay (750ns typical) and matched ton/toff preserve audio signal fidelity, while the integrated bootstrap diode keeps the BOM compact for consumer audio products. Place a 10uF VCC bypass capacitor and a 1uF bootstrap capacitor close to the IC, and ensure the high-side bootstrap refresh happens every audio cycle by limiting the maximum audio modulation depth. The 0.35A sink current is well-matched to typical audio-output MOSFETs in the 30-100nC Qg range.
Recommended
Electronic HID / Fluorescent Ballast
In HID (high-intensity discharge) lamp ballasts and electronic fluorescent ballasts, the IR2109STRPBF drives the resonant half-bridge inverter that drives the lamp at 20-100 kHz. The 600V rating supports universal mains input (110/220/277VAC) after rectification, and the integrated bootstrap diode simplifies the lamp-driver PCB. Designers pair the IR2109STRPBF with a self-oscillating ballast controller such as the IRS2153D for fluorescent ballasts, or with a dedicated HID controller for metal-halide and high-pressure sodium lamps. The dV/dt immunity is critical in this application because of the high dV/dt edges on the switching node VS.
Recommended
Solar Micro-Inverter / String Inverter
In small solar micro-inverters (200-500W) and string inverters up to 1kW, the IR2109STRPBF drives the half-bridge MOSFETs in the DC-DC boost stage or the grid-tie H-bridge inverter stage. The 600V high-side rating supports open-circuit PV panel voltages up to 600V per string (after MPPT) and direct grid-rectified 220VAC. The integrated UVLO on both VCC and VBS prevents incomplete turn-on during low-battery brownout conditions, which could otherwise cause catastrophic shoot-through. Pair with a grid-synchronization MPPT controller for residential PV systems.
Recommended
Industrial Half-Bridge Induction Heater
For low-power (sub-1kW) industrial induction-heating and induction-cooking appliances, the IR2109STRPBF drives the resonant half-bridge that feeds the heating coil via a series resonant tank (typically 20-100 kHz). The 600V rating and 0.35A peak sink drive current comfortably switch IGBTs in the 5-15A range for countertop induction cooktops and small industrial heating systems. The negative VS transient tolerance is important here because the resonant tank can drive VS below ground during reverse-resonant cycles. Match the bootstrap capacitor to the operating frequency to maintain VBS above the UVLO threshold.
Recommended
High-Voltage Synchronous Buck / Boost Converter
The IR2109STRPBF drives the high-side and low-side MOSFETs in a high-voltage synchronous buck or boost converter up to 600V input - for example, a 400V-to-12V DC-DC stage in a server PSU or telecom rectifier. The integrated bootstrap diode refreshes the high-side supply every switching cycle without an external rectifier, reducing BOM and PCB area. The 540ns ton/toff match ensures clean commutation and prevents the cross-conduction that would otherwise cause efficiency loss and possible MOSFET failure. Add a small RC snubber across the high-side MOSFET to control ringing from the parasitic inductance of the switching loop.
Recommended
Recommended Products Summary
Engineering reference data for IR2109STRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR2109SPBF | IR2304SPBF | L6391D | L6393D | NCP5106ADR2G |
|---|---|---|---|---|---|---|
| Package | 8-SOIC | 8-SOIC (tube) | 8-SOIC | 8-SO | 8-SO | 8-SOIC |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | STMicroelectronics | onsemi |
| High-Side Offset Voltage (Max) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Peak Source Current | 0.2 A | 0.2 A | 0.12 A | 0.2 A | 0.2 A | 0.25 A |
| Peak Sink Current | 0.35 A | 0.35 A | 0.2 A | 0.35 A | 0.35 A | 0.5 A |
| Supply Voltage Range (VCC) | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Integrated Bootstrap Diode | Yes | Yes | Yes | Yes | Yes | Yes |
| UVLO | Yes (VCC + VBS) | Yes | Yes | Yes | Yes | Yes |
| Input Logic | Non-Inverting | Non-Inverting | Non-Inverting | Inverting | Inverting | Non-Inverting |
Key Differentiators
- Integrated bootstrap diode reduces BOM by one component (vs IRS2003SPBF)
- Higher sink drive current for faster MOSFET turn-off (vs IR2304SPBF)
- 600V rating vs lower-voltage 200V alternatives (vs IRS2003SPBF)
- Lower propagation delay than most cross-brand equivalents (vs L6391D / L6393D)
Design Notes
Bootstrap capacitor sizing is critical for half-bridge operation. Estimate the minimum bootstrap capacitor as C_BST >= Q_gate / ΔV, where Q_gate is the total gate charge of the high-side MOSFET and ΔV is the allowable droop on VBS above the UVLO threshold (typically 0.5-1V margin). For a 50nC Qg MOSFET switching at 100 kHz with 1V droop allowance, C_BST >= 50nC / 1V = 50nF - choose 100nF or 220nF for design margin. Place the bootstrap capacitor physically close to pins VB and VS to minimize parasitic inductance.
Keep the high-current switching loop (HO output -> high-side MOSFET gate -> high-side MOSFET source/VS -> back to IR2109STRPBF VS pin) as small as physically possible. A switching-loop area of even 1-2 cm² will generate significant ringing and EMI that can couple into adjacent circuitry. Use a ground-return path directly under the gate-drive traces (microstrip layout) and avoid routing sensitive analog signals (PWM input, feedback) over the switching-node copper area. Add a small RC snubber (10-22Ω + 1-10nF) across the high-side MOSFET if VS ringing exceeds 30-40V.
Do not exceed the maximum high-side dV/dt rating, which is 50 V/ns for the IR2109STRPBF. Exceeding this rating - typically by switching very large MOSFETs with sub-100ns rise times - can inject charge into the level-shift stage and cause spurious HO turn-on. Always gate-resistor-limit the HO output so the high-side MOSFET rise time stays below 50V divided by (VS_max). Also note that the IR2109STRPBF uses a single-input logic (HIN/LIN shared via IN pin in some datasheet revisions) - check the specific datasheet revision for your build to confirm pin 2 (IN) configuration.
Estimated: the IR2109STRPBF dissipates approximately P_driver = VCC × I_Q + Q_gate × f_sw × VCC, where I_Q is the quiescent current (typically 0.5-1mA) and Q_gate × f_sw × VCC is the gate-drive loss. At VCC = 15V, f_sw = 100 kHz, and Q_gate = 50 nC, gate-drive loss ≈ 15V × 50nC × 100kHz = 75 mW - negligible. The 8-SOIC package has θJA of approximately 150 C/W, so a 75mW dissipation yields a 11.2 C junction rise above ambient - well within the 125 C operating limit. No heatsink is needed for typical half-bridge drive applications.
Compliance Information
Pb-free (PBF suffix) per Infineon datasheet. RoHS and REACH compliant. Not AEC-Q100 qualified - for automotive half-bridge drivers consider the automotive-grade EiceDRIVER variants in the IR21xx-AEC series.
