IR2110STRPBF - 500V Half-Bridge Gate Driver 2.5A SOIC-16 | Infineon
MPN: IR2110STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.95 | $2.95 |
| 10 | $2.55 | $25.50 |
| 100 | $1.95 | $195.00 |
| 500 | $1.65 | $825.00 |
| 1,000 | $1.35 | $1,350.00 |
IR2110STRPBF Overview
A gate driver IC (also called a MOSFET driver or IGBT driver) is a power-management semiconductor that sits between a low-power control signal (from a microcontroller, DSP, or logic gate) and the gate of a high-power switching transistor. It provides level shifting, voltage translation, and high peak-current amplification so the small logic signal can rapidly charge and discharge the much larger gate capacitance of the MOSFET or IGBT, thereby minimizing switching losses. Within the broader taxonomy, gate drivers fall under power management ICs, which themselves belong to the broader category of power semiconductors and analog mixed-signal ICs.
Key specifications include 500 V absolute maximum offset voltage on the high-side channel, logic inputs compatible with standard CMOS or LSTTL outputs down to 3.3 V, an undervoltage lockout (UVLO) for both supply rails, and a floating channel designed for bootstrap operation. The output stage provides a high pulse-current buffer to drive the largest power MOSFETs and IGBTs. Internal deadtime and matched propagation delays simplify half-bridge timing.
The IR2110STRPBF uses proprietary HVIC and latch-immune CMOS processes with monolithic construction, achieving integrated level shifting up to 500 V without external optocouplers or gate-drive transformers. The bootstrap supply technique allows the high-side channel to operate with only a single supply voltage, reducing BOM count compared to isolated-gate-driver approaches.
Typical applications include motor control (BLDC, AC induction, and stepper motor drives), switch-mode power supplies (SMPS), half-bridge and full-bridge DC-DC converters, lighting ballasts, induction heating, D-class audio amplifiers, and solar inverters. The wide voltage range and 2.5 A drive strength suit industrial automation, white goods, and renewable-energy power stages.
When designing with this driver, select a bootstrap diode with fast recovery and adequate voltage rating, and size the bootstrap capacitor to supply the gate charge of the high-side FET plus margin for refresh cycles. Place the VCC bypass capacitor as close to pins 9 and 16 as possible to suppress switching noise that could otherwise corrupt the input logic.
This page synthesizes distributor pricing, drop-in alternatives, pinout, and practical design notes that complement (not duplicate) the manufacturer datasheet for engineers evaluating or sourcing the IR2110STRPBF.
Drop-in alternatives for IR2110STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IR2110STRPBF (same form factor and footprint) β differing in Package, Logic Input Compatibility, MSL Level, Number of Drivers, RoHS Status.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IR2110SPBF
β Drop-Inβ In Stock
$1.98 / Unit
View Datasheet βIR2113STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS21867STRPBF
β Drop-Inβ In Stock
$1.55 / Unit
View Datasheet βIR2110STRPBF Maximum Ratings & Electrical Characteristics
| Function | Half-Bridge Gate Driver |
| Number of Drivers | 2 (High-Side + Low-Side) |
| Driven Configuration | Half-Bridge |
| Channel Type | Independent, Synchronous |
| Output Type | Non-Inverting |
| Peak Output Current (Source/Sink) | 2.5 A / 2.5 A |
| Offset Voltage (High-Side, max) | 500 V |
| Supply Voltage (VCC) | 10 V to 20 V |
| Logic Input Compatibility | CMOS / LSTTL, down to 3.3 V logic |
| Input Threshold | Logic-level compatible (3.3 V / 5 V) |
| Undervoltage Lockout (UVLO) | Yes (both VCC and VBS) |
| Bootstrap Supply | Required for high-side channel |
| Operating Temperature Range | -40 C to +125 C |
| Package | 16-SOIC (SOIC W / 2110-S16) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant (Pb-free, PBF suffix) |
| Lead-Free | Yes (PBF suffix) |
IR2110STRPBF Pin Configuration
| Pin 1 | LO β Low-side gate drive output |
| Pin 2 | COM β Low-side return (ground reference) |
| Pin 3 | VCC β Low-side supply voltage (10-20 V) |
| Pin 4 | NC β Not connected (per datasheet) |
| Pin 5 | NC β Not connected (per datasheet) |
| Pin 6 | VS β High-side floating supply return (switch node) |
| Pin 7 | VB β High-side floating supply (bootstrap) |
| Pin 8 | HO β High-side gate drive output |
| Pin 9 | NC β Not connected (per datasheet) |
| Pin 10 | NC β Not connected (per datasheet) |
| Pin 11 | SD β Shutdown input (active low) |
| Pin 12 | LIN β Low-side logic input |
| Pin 13 | VSS β Logic ground |
| Pin 14 | NC β Not connected (per datasheet) |
| Pin 15 | HIN β High-side logic input |
| Pin 16 | VDD β Logic supply voltage |
Typical Applications
IR2110STRPBF is suitable for 7 applications: BLDC Motor Control (Three-Phase Inverter), Switch-Mode Power Supply (SMPS) Half-Bridge, Solar Micro-Inverter and String Inverter, Induction Heating Cooktop Power Stage, Class D Audio Amplifier Output Stage, Electronic Ballast for HID / Fluorescent Lighting, Welding Inverter Power Stage.
BLDC Motor Control (Three-Phase Inverter)
The IR2110STRPBF is a classic choice for three-phase BLDC and PMSM motor drives where each half-bridge of the inverter needs an isolated high-side gate drive. With its 500 V offset rating it can handle 110/220 VAC rectified DC bus voltages up to ~400 VDC, while the 2.5 A source/sink current can rapidly switch sub-1 kW IGBT or MOSFET inverter stages. Typically three IR2110STRPBF chips drive a six-MOSFET three-phase bridge, with bootstrap capacitors and diodes providing floating high-side supplies for the upper switches. The driver integrates undervoltage lockout for both VCC and VBS rails, protecting the inverter from inadequate gate drive during low-voltage transients such as motor regen events.
Recommended
Switch-Mode Power Supply (SMPS) Half-Bridge
In half-bridge and full-bridge SMPS topologies such as LLC resonant converters, phase-shifted full-bridge converters, and hard-switched half-bridge converters, the IR2110STRPBF drives the primary-side high-voltage MOSFETs from a low-voltage PWM controller. The 500 V offset comfortably supports 400 VDC bus rails, while the 2.5 A drive current is adequate for MOSFETs up to several hundred kHz. Bootstrap supply with a fast-recovery diode and a properly-sized ceramic capacitor (typically 0.47 uF to 2.2 uF) provides the floating high-side rail. Designers pair it with a current-mode controller such as the UCC28950 or SG3525 for digital or analog PWM generation.
Recommended
Solar Micro-Inverter and String Inverter
In grid-tied photovoltaic inverters, the IR2110STRPBF drives the half-bridge stages that convert 30-60 VDC panel strings or boost-converter outputs to higher DC bus voltages. The high-side floating channel simplifies bootstrap operation for the upper MOSFET in interleaved boost and full-bridge topologies. For residential single-phase micro-inverters (typically 200-600 W), three to six IR2110STRPBF chips handle the entire power stage. The integrated UVLO protects against insufficient gate drive during startup and MPPT transients, which is critical for inverter safety per UL 1741 and IEEE 1547 grid-interconnect standards.
Recommended
Induction Heating Cooktop Power Stage
Induction cooktops and induction heating appliances require resonant half-bridge or full-bridge inverters switching at 20-100 kHz to drive the work-coil. The IR2110STRPBF's 2.5 A peak drive and 500 V rating make it suitable for single-half-bridge resonant tank drivers up to approximately 3 kW. The driver provides clean gate signals with matched propagation delays between high and low side channels, important for ZVS (zero-voltage switching) and ZCS (zero-current switching) topologies used in induction heating. Bootstrap supply with fast diodes handles the high-side floating rail efficiently, while the integrated UVLO prevents shoot-through during cooktop start-up.
Recommended
Class D Audio Amplifier Output Stage
Class D audio amplifiers use a half-bridge or full-bridge output stage driven by a modulator IC. The IR2110STRPBF can drive the output MOSFETs in higher-power Class D amplifiers (200 W to 1 kW) where the supply rail reaches +/- 50 V to +/- 100 V. Its 2.5 A drive current and matched propagation delays minimize deadtime distortion, while the high-side floating channel supports BTL (bridge-tied load) topology. The bootstrap supply reduces BOM count compared to gate-drive transformers. Designers pair it with audio modulators such as the IRS2092 or TPA3251 for high-fidelity audio reproduction.
Recommended
Electronic Ballast for HID / Fluorescent Lighting
In high-intensity discharge (HID) and fluorescent electronic ballasts, the IR2110STRPBF drives the half-bridge resonant tank that ignites and runs the lamp. The 500 V offset handles rectified mains up to 400 VDC, and the 2.5 A drive current supports the inrush and steady-state switching of the ballast MOSFETs. Bootstrap supply simplifies the high-side drive for the upper MOSFET in the resonant inverter. UVLO protection prevents lamp flicker and damage during startup by ensuring the MOSFETs only switch when VCC is sufficient. For dimmable ballasts the driver's matched timing enables clean PWM-style dimming control.
Recommended
Welding Inverter Power Stage
Welding inverters (MMA, MIG, TIG) require robust half-bridge or full-bridge IGBT/MOSFET drivers capable of handling harsh electrical environments and high peak currents. The IR2110STRPBF's 500 V rating supports 3-phase 380 VAC rectified bus rails, and the 2.5 A drive is sufficient for IGBT modules up to 200 A. Bootstrap supply with fast-recovery high-voltage diodes handles the floating high-side rail, while the latch-immune CMOS construction ensures reliable operation in electrically noisy welding environments with strong dV/dt and EMI. The integrated UVLO prevents IGBT cross-conduction during arc strikes and welding transients.
Recommended
Recommended Products Summary
Engineering reference data for IR2110STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR2110SPBF | IR2113STRPBF | IRS21867STRPBF | IR2117SPBF | IR2109SPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 16-SOIC | 16-SOIC - same | 16-SOIC - same | 16-SOIC - same | 8-DIP - different | 8-SOIC - different |
| Offset Voltage (max) | 500 V | 500 V | 500 V | 600 V | 600 V | 600 V |
| Peak Output Current | 2.5 A | 2.5 A | 2.5 A | 2.0 A | 0.5 A (single channel) | 0.5 A |
| VCC Supply Range | 10-20 V | 10-20 V | 10-20 V | 10-20 V | 10-20 V | 10-20 V |
| Shutdown Pin (SD) | Yes | Yes | Yes | Yes | No (single channel) | Yes |
| Configuration | Half-Bridge (Hi+Lo) | Half-Bridge | Half-Bridge | Half-Bridge | Single High-Side | Half-Bridge |
Key Differentiators
- Proprietary HVIC and latch-immune CMOS technology (vs IR2117SPBF (single high-side driver))
- Wide 500 V offset voltage rating (vs IRS21867STRPBF (600 V))
- Industry-standard 16-SOIC footprint with extensive design resources (vs IR2109SPBF (8-SOIC))
Design Notes
Place the VCC bypass capacitor (typically 0.1 uF ceramic in parallel with 10 uF electrolytic) within 5 mm of pins 3 (VCC) and 16 (VDD) to suppress switching noise that could otherwise couple into the input logic. Keep the bootstrap capacitor (VB-VS) return trace short and direct to minimize parasitic inductance; long traces can cause ringing on VBS that triggers spurious UVLO. Use a wide ground plane under the IC to provide low-impedance return paths for the 2.5 A peak gate-drive currents.
Size the bootstrap capacitor per the formula C_boot > (Qg + Qbs) / delta_VBS, where Qg is the high-side MOSFET gate charge and Qbs is the bootstrap capacitor charge transfer per cycle (typically 5-20 nC per the IR2110 datasheet). For a MOSFET with Qg = 100 nC and target VBS ripple of 100 mV, a 1 uF ceramic capacitor provides ample margin. Pair with a fast-recovery bootstrap diode rated for at least 2x the high-side offset voltage and 1 A average current. Estimated: 100 nC / 0.1 V = 1.0 uF minimum, round up to next standard value (1 uF or 2.2 uF) for temperature and aging margin.
Common pitfalls include: (1) omitting the bootstrap capacitor on the high-side channel, which causes the high-side MOSFET to never turn on properly; (2) using a slow-recovery bootstrap diode that allows VBS to discharge before the next refresh cycle; (3) ignoring the SD (shutdown) pin and leaving it floating - tie it to VDD through a pull-up resistor or to a fault circuit; (4) exceeding the absolute maximum dV/dt on the VS pin (typically 50 V/ns), which can latch up the high-side channel in older designs. Add an RC snubber across the high-side MOSFET if dV/dt is a concern.
The 16-SOIC package has a thermal resistance (theta_JA) of approximately 80 C/W on a standard JEDEC 4-layer test board. At 2.5 A peak switching currents, the average power dissipation is typically below 0.5 W, giving a junction temperature rise of ~40 C above ambient. For continuous high-frequency operation above 100 kHz, monitor junction temperature and consider copper-pour heat-sinking or upgrading to the IR2110STRPBF variant in a larger package for industrial temperature environments up to 125 C.
Maintain matched trace lengths on HIN and LIN to the controller to keep propagation delays balanced between high-side and low-side channels. Place the controller within 50 mm of the IR2110STRPBF and use series-termination resistors (10-100 ohm) on long traces if ringing exceeds 1 V on the logic inputs. The VDD and VCC supplies should be decoupled separately to prevent logic-noise coupling into the gate-drive rail. Keep switching node (VS) traces away from logic traces to minimize capacitive coupling.
Compliance Information
RoHS compliant per Infineon product page (PBF suffix). REACH status compliant per distributor listings. AEC-Q100 status not explicitly stated for industrial/automotive qualification - verify with Infineon if required for automotive designs.
