Samsung Electronics

K3KL9L90DM-MGCU - LPDDR5X 64Gb x32 8533Mbps FBGA | Samsung

MPN: K3KL9L90DM-MGCU ✓ Active
In Stock Ships in 1-3 business days
[DATA_NEEDED: VDDQ voltage] Vdss 315-ball FBGA Package LPDDR5X-8533 Speed LPDDR5X SDRAM Memory
From $66.4 USD / Unit
MOQ: 1 |
Price updated: 2026-09-04
Volume Pricing
Qty Unit Price Extended
1 $81.48 $81.48
10 $77.4 $774.00
100 $73.54 $7,354.00
500 $69.87 $34,935.00
1,000 $66.4 $66,400.00
ℹ️ All prices are in USD

Drop-in alternatives for K3KL9L90DM-MGCU — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

K3KL9L90CM-MGCT

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Samsung Electronics
📦 315-ball FBGA
LPDDR5X SDRAM (DRAM) · 64 Gbit (8 GByte) · x32 · 7500 Mbps · LPDDR5X · 500 mV / 900 mV / 1.05 V / 1.8 V · 500 mV · -25C to +85C

✓ In Stock

$36.91 / Unit

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K3KL9L90DM-MGCU0UT

✅ Drop-In
📦 315-ball FBGA
same 64Gb x32 LPDDR5X in FBGA-315, 1.05V-class supply coding; ordering-suffix variant with different speed/temp code details

📋 Reference alternative (not in catalog)

K3KL8L80DM-MGCU

✅ Drop-In
Samsung Electronics
📦 315-ball FBGA
LPDDR5X SDRAM · 8 Gbit · 1G x 32 · 1.05 V · FBGA-315 · Surface Mount · LPDDR5X (JEDEC LPDDR5 backward-compatible) · [DATA_NEEDED: max data rate / speed grade]

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Contact for price

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K3KL8L80DM-JGCT

✅ Drop-In
Samsung Electronics
📦 315-ball FBGA
Samsung Electronics · LPDDR5X SDRAM · 32 Gbit (4 GB) · x32 · FBGA-315 (315-ball BGA) · Up to 7500 Mbps (family up to 8.5 Gbps) · LPDDR5X (JEDEC LPDDR5-compatible, low-power SDRAM) · 500 mV / 900 mV / 1.05 V / 1.8 V

✓ In Stock

$80.7 / Unit

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K3KL7L70EM-MGCU

✅ Drop-In
Samsung Electronics
📦 315-ball FBGA
LPDDR5X SDRAM · 12 Gbit · x32 · 315-ball FBGA · Surface Mount (BGA) · Mass Production · LPDDR5X · Samsung Semiconductor

✓ In Stock

$12 / Unit

View Datasheet →

K3KL9L90DM-MGCU Maximum Ratings & Electrical Characteristics

Memory Type LPDDR5X SDRAM
Total Density 64 Gbit (8 GB)
Organization x32
Data Rate 8533 Mbps per pin
Package 315-ball FBGA
Mounting Type Surface Mount
Operating Temperature -25C to +85C
Standard JEDEC LPDDR5X (LPDDR5 family)
Channel Configuration 32-bit channel
Speed Class Designator LPDDR5X-8533
Density per Die 16 Gbit per channel density (per distributor data)
RoHS Status Compliant
Manufacturer Samsung Electronics

K3KL9L90DM-MGCU 315-ball fbga Pin Configuration Guide

Complete pinout information for K3KL9L90DM-MGCU (315-ball fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

315-ball fbga package pinout diagram for K3KL9L90DM-MGCU

No detailed pinout data available for K3KL9L90DM-MGCU.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for K3KL9L90DM-MGCU Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

K3KL9L90DM-MGCU is suitable for 6 applications: Flagship Smartphone Main Memory, AI Edge Inference Accelerators, Automotive Infotainment and ADAS, High-Performance Embedded Computing Modules, Tablets and Portable Computing, Networking and 5G Infrastructure.

📱

Flagship Smartphone Main Memory

The K3KL9L90DM-MGCU fits flagship smartphone main-memory designs because its 8533 Mbps data rate and 64 Gbit (8 GB) density deliver the bandwidth that modern application processors demand for on-device AI, gaming, and multi-camera pipelines. Soldered in a 315-ball FBGA directly beneath or beside the SoC, it offers the shortest possible trace lengths, which preserves signal integrity at LPDDR5X speeds and keeps the assembly profile low for thin form factors. The LPDDR5X protocol's dynamic voltage and frequency scaling lets the memory controller drop to low-power states during idle and voice-wakeup scenarios, materially extending battery life compared with fixed-speed operation. Integrators should confirm the host SoC PHY supports the 8533 Mbps training sequences and plan PMIC rails accordingly for the low-voltage I/O domain.

🧩

AI Edge Inference Accelerators

On-device AI workloads are memory-bandwidth bound, and the K3KL9L90DM-MGCU's 8533 Mbps per-pin rate over a 32-bit channel supplies the throughput needed to stream large neural network weights and activation maps without starving the NPU. The 8 GB capacity accommodates quantized transformer and vision models directly in local memory, avoiding the latency and power cost of offloading to storage. Because the device operates from -25C to +85C, it suits industrial edge gateways and smart-camera enclosures with passive cooling. Designers should size the LPDDR5X power-delivery network for sustained bandwidth bursts during model execution and enable partial-array self-refresh in always-on wake-word and background-sensing modes to cut standby drain between inference events.

🚗

Automotive Infotainment and ADAS

The K3KL9L90DM-MGCU serves automotive infotainment and ADAS perception domains that need high memory bandwidth for multi-camera sensor fusion, navigation rendering, and cockpit displays. Its -25C to +85C operating range covers typical cabin and ECU environments, and the FBGA-315 soldered-down format resists vibration better than socketed memory. The 8 GB density supports running perception stacks and map data simultaneously in RAM. Note that this commercial-grade part is not inherently AEC-Q100 qualified; automotive programs should request Samsung's automotive-qualified suffix or a formally qualified family member. Power architecture should include a dedicated LPDDR5X PMIC rail with proper sequencing and dynamic voltage scaling support to meet cold-crank and low-power standby requirements.

🖥️

High-Performance Embedded Computing Modules

System-on-module (SoM) vendors use LPDDR5X devices like the K3KL9L90DM-MGCU as soldered-down main memory on COM Express, SMARC, and proprietary high-performance modules. Compared with SODIMM-based DDR, the 315-ball FBGA package offers lower assembly height, better signal integrity at 8533 Mbps due to short controlled-impedance traces, and improved resistance to shock and vibration in industrial and aerospace deployments. The 8 GB capacity addresses virtualization and machine-learning workloads on embedded x86 and Arm hosts. Module designers should validate the LPDDR5X fly-by routing against the SoC vendor reference design and reserve thermal design margin, since sustained memory bandwidth under passive cooling raises local PCB temperatures near the DRAM stack.

📱

Tablets and Portable Computing

Tablets and thin portable computers benefit from the K3KL9L90DM-MGCU's balance of capacity and power efficiency: 8 GB of LPDDR5X supports desktop-class browsers, creative applications, and multitasking, while LPDDR5X low-voltage signaling preserves battery runtime. The device's dynamic frequency scaling allows the OS to step memory speed with workload demand, reducing average power in mixed-use scenarios. The FBGA package's compact footprint fits the tight Z-height budgets of slim industrial designs, and soldered memory eliminates connector cost and contact-reliability concerns. Firmware teams should implement LPDDR5X self-refresh and deep power-down entry promptly during screen-off states, as idle DRAM power is a measurable share of total standby consumption in portable products.

🌐

Networking and 5G Infrastructure

5G small cells, edge routers, and network appliances increasingly deploy LPDDR5X like the K3KL9L90DM-MGCU for packet buffering, cryptography contexts, and control-plane data structures. The 8533 Mbps data rate provides headroom for line-rate forwarding table access and deep packet inspection, while the -25C to +85C rating suits outdoor enclosures and sealed radio units with limited forced airflow. The soldered FBGA-315 format withstands thermal cycling better than DIMM sockets in base-station environments. Designers should implement robust LPDDR5X training and periodic retraining in firmware to tolerate temperature swings, and qualify the part's long-term availability with Samsung, as networking programs typically demand multi-year supply commitments with change-notification coverage.

What is the K3KL9L90DM-MGCU and what are its key specifications?
The K3KL9L90DM-MGCU is a Samsung LPDDR5X SDRAM with 64 Gbit (8 GB) density, x32 organization, and an 8533 Mbps per-pin data rate in a 315-ball FBGA package rated -25C to +85C. According to Samsung product data, it belongs to the LPDDR5X-8533 speed class used in flagship mobile and AI edge platforms where soldered-down memory maximizes bandwidth per watt.
What is the price of K3KL9L90DM-MGCU?
The K3KL9L90DM-MGCU is listed from approximately $81.48 at quantity 1 as of 2026-09-04, per LCSC. Memory DRAM prices fluctuate significantly with market conditions, so volume-tier pricing (10 to 1000 pieces) should be confirmed via RFQ before design-in. Win Source and IBS Electronics also provide quote-based pricing for this part.
Is K3KL9L90DM-MGCU in stock?
As of 2026-09-04, LCSC lists the K3KL9L90DM-MGCU as out of stock, though authorized independent distributors such as Win Source, IBS Electronics, and Vyrian offer RFQ-based sourcing. Samsung LPDDR5X devices are often allocated through OEM channels, so lead times should be confirmed directly with the distributor before committing to a production schedule.
Where can I buy K3KL9L90DM-MGCU online?
You can buy or RFQ the K3KL9L90DM-MGCU from LCSC (C52145345), JLCPCB, Win Source, IBS Electronics, AIChipLink, GalaxyIC, and Vyrian. Most listings are quote-based rather than add-to-cart due to volatile DRAM market pricing; XAIPART also accepts purchase inquiries for this Samsung LPDDR5X component with volume-tier pricing available on request.
What is the best drop-in replacement for K3KL9L90DM-MGCU?
The closest same-footprint drop-in alternatives are Samsung family variants in the same 315-ball FBGA package: K3KL9L90CM-MGCT and K3KL9L90DM-MGCU0UT (same 8 GB density and speed class), and K3KL8L80DM-MGCU or K3KL8L80DM-JGCT (halved density, pin-compatible for platforms designed for 4 GB). Always verify speed-grade support (8533 Mbps) in the host SoC memory controller before substituting.
What is the difference between K3KL9L90DM-MGCU and K3KL8L80DM-MGCU?
The K3KL9L90DM-MGCU provides 64 Gbit (8 GB) of LPDDR5X memory, while the K3KL8L80DM-MGCU provides 32 Gbit (4 GB) - half the density in the same 315-ball FBGA footprint. Both use x32 organization and support the LPDDR5X speed classes, so the L80 part is pin-compatible and suitable when the 8 GB capacity is unnecessary or when supply of the L90 part is constrained.
Is K3KL9L90DM-MGCU suitable for automotive ADAS applications?
Yes, with qualification caveats. The K3KL9L90DM-MGCU operates from -25C to +85C, which covers many infotainment and ADAS perception module environments, and its 8533 Mbps bandwidth supports camera and radar sensor fusion workloads. However, standard commercial LPDDR5X is not AEC-Q100 Grade 1/2 qualified; automotive programs should confirm Samsung's automotive-qualified ordering suffix with the manufacturer.
What is the Samsung equivalent cross-brand alternative for K3KL9L90DM-MGCU?
Cross-brand pin-compatible LPDDR5X equivalents would typically come from Micron, SK Hynix, or Kioxia in a 315-ball FBGA LPDDR5X package, but the cross-reference data gathered for this part did not return a verified cross-brand cross with confirmed pin-map and parametric match. For guaranteed footprint compatibility, we recommend staying within the Samsung K3KL9L90DM family or performing ball-map validation against any candidate before layout reuse.
Can K3KL9L90CM-MGCT replace K3KL9L90DM-MGCU?
Yes, in most designs. The K3KL9L90CM-MGCT is a same-family Samsung LPDDR5X part in the same 315-ball FBGA footprint with matching density and speed class; the suffix differences indicate packaging/temperature-coding variants rather than core die changes. Confirm the exact suffix meaning (package finish, tray/reel, temperature code) against the Samsung ordering-information table before purchasing, as suffix variations can change ball finish and lead-time.
Where can I download the K3KL9L90DM-MGCU datasheet PDF?
The K3KL9L90DM-MGCU datasheet is available for download from Alldatasheet (searchable under the exact MPN), LCSC's product detail page C52145345, and Win Source. Samsung Semiconductor's official product pages host the authoritative LPDDR5X family datasheets; the component-specific PDF covers ball map, timing parameters at 8533 Mbps, and AC/DC operating conditions.
Where can I find the K3KL9L90DM-MGCU pinout or ball map?
The K3KL9L90DM-MGCU ball map is published in the official Samsung LPDDR5X datasheet as a 315-ball FBGA grid diagram, showing CA, CK, CS, DQ, DQS, DM, and power/ground ball assignments. This page does not reproduce the full 315-ball map; download the Samsung datasheet PDF and verify the ball-out against your host SoC memory controller routing guide before layout.
What supply voltages does the K3KL9L90DM-MGCU use?
The K3KL9L90DM-MGCU uses the JEDEC LPDDR5X power architecture with a low core supply and an even lower VDDQ I/O supply that supports dynamic voltage scaling for speed-versus-power trade-off. The exact rail voltages for this speed grade must be confirmed in the Samsung datasheet; the host PMIC (for example on Qualcomm or MediaTek platforms) provides dedicated LPDDR5X rails including VDD2 and VDDQ with training-time adjustment.
What PCB design rules are needed for LPDDR5X at 8533 Mbps?
At 8533 Mbps, LPDDR5X routing requires matched trace lengths within tight skew budgets on each byte lane, controlled impedance (typically around 40 ohm single-ended for DQ), solid reference planes, and length-matched fly-by or point-to-point CA/CK routing. Follow the SoC vendor's LPDDR5X hardware design guide, perform SI simulation with eye-mask checks, and include DQ/CA training support in the boot firmware for reliable operation.
Is K3KL9L90DM-MGCU RoHS compliant?
Yes. Distributor listings, including JLCPCB's part detail for the K3KL9L90DM-MGCU, identify the component as RoHS compliant. Samsung's mainstream LPDDR5X devices are also produced lead-free in FBGA packaging. For REACH, halogen-free, and conflict-minerals declarations, obtain Samsung's official compliance certificates via your distributor, as these documents are not reproduced in third-party listings.
What are the main applications of the K3KL9L90DM-MGCU?
The K3KL9L90DM-MGCU is designed for high-bandwidth, power-constrained platforms: flagship smartphone main memory, AI edge inference accelerators, automotive infotainment and ADAS sensor-fusion systems, tablets, and high-performance embedded compute modules. Its combination of 8 GB density, x32 organization, and 8533 Mbps operation makes it suited to running large on-device AI models and multi-camera workloads where soldered-down LPDRAM outperforms detachable memory in signal integrity and power efficiency.

Engineering reference data for K3KL9L90DM-MGCU — comparison, design guidance, and compliance information.

Selection Guide

Choose the K3KL9L90DM-MGCU when your platform needs 8 GB of soldered-down main memory at the top LPDDR5X speed grade (8533 Mbps) in a compact 315-ball FBGA footprint - typical for flagship smartphones, AI edge accelerators, and ADAS perception modules. Choose K3KL8L80DM-MGCU (same package, 4 GB) when capacity requirements are halved or the L90 is unavailable, since it drops onto the same footprint. Choose K3KL9L90CM-MGCT or K3KL9L90DM-MGCU0UT as ordering-code alternates when supply of the exact suffix is constrained - verify the suffix decode first. Choose K3KL7L70EM-MGCU only when your memory controller does not support 8533 Mbps or bandwidth demand is modest. Note that no cross-brand drop-in LPDDR5X cross was verified for this part; any Micron or SK Hynix equivalent requires ball-map and speed-grade validation before layout reuse.

Comparison with Alternatives

Parameter This Product K3KL9L90CM-MGCT K3KL9L90DM-MGCU0UT K3KL8L80DM-MGCU K3KL7L70EM-MGCU
Package 315-ball FBGA 315-ball FBGA - same 315-ball FBGA - same 315-ball FBGA - same 315-ball FBGA - same
Brand Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics Samsung Electronics
Density 64 Gbit (8 GB) 64 Gbit (8 GB) 64 Gbit (8 GB) 32 Gbit (4 GB) [DATA_NEEDED]
Organization x32 x32 x32 x32 x32
Data Rate 8533 Mbps 8533 Mbps 8533 Mbps [DATA_NEEDED] [DATA_NEEDED] (lower speed grade)
Operating Temperature -25C to +85C [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Memory Standard LPDDR5X LPDDR5X LPDDR5X LPDDR5X LPDDR5X
Qty-1 Price (as of 2026-09-04) $81.48 [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]

Key Differentiators

  • Top LPDDR5X speed grade bandwidth (vs K3KL7L70EM-MGCU)
  • Double the memory capacity in the same footprint (vs K3KL8L80DM-MGCU)
  • Supply-chain flexibility within one vendor family (vs K3KL9L90CM-MGCT)

Design Notes

At 8533 Mbps, LPDDR5X signal integrity dominates design success. Route DQ/DQS byte lanes with matched intra-byte skew per the SoC vendor's LPDDR5X layout guide, maintain controlled single-ended impedance (typically about 40 ohm per JEDEC LPDDR5X practice; confirm with your stackup), and keep all memory nets on a continuous reference plane with no splits beneath high-speed regions. Run full SI simulation with eye-mask compliance at the highest speed grade, and budget for write-leveling and read-training margins across the -25C to +85C temperature range.

Plan the LPDDR5X power delivery with dedicated core and VDDQ rails from the host PMIC, supporting dynamic voltage scaling during speed transitions. Size the VDDQ rail decoupling with a mix of bulk and high-frequency ceramics placed close to the DRAM balls, and follow the PMIC vendor's sequencing requirements for LPDDR5X rail order. Estimated: at high-bandwidth sustained operation, LPDDR5X power scales roughly with data rate, so thermal dissipation in the FBGA area should be modeled with your SoC's reference power numbers rather than assumed negligible.

Samsung LPDDR5X ordering suffixes encode speed, temperature, and package-finish details; do not assume that similarly named K3KL9L90 family parts are identical - verify the suffix decode in the Samsung ordering-information table before substituting (for example, MGCU vs MGCT vs GCU0UT codings). Also confirm the host memory controller's supported speed grades before design-in, and treat LPDDR availability through distribution as RFQ-driven since stock fluctuates with DRAM market cycles.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Unknown
Halogen Free
Unknown
Conflict Minerals
Unknown

RoHS compliance stated in JLCPCB and LCSC listings. Other declarations (REACH, halogen-free, conflict minerals) should be obtained via official Samsung compliance certificates through the distributor.

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Samsung Electronics K3KL9L90DM-MGCU K3KL9L90CM-MGCT K3KL8L80DM-MGCU K3KL9L90DM-MGCU0UT K3KL7L70EM-MGCU LPDDR5X LPDDR5 LPDRAM SDRAM DRAM FBGA-315 fine-pitch ball grid array JEDEC LPDDR5X standard RoHS 8533 Mbps data rate 64 Gbit density x32 organization smartphone main memory ADAS sensor fusion AI edge inference dynamic voltage and frequency scaling self-refresh
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