K4AAG165WB-MCRC - 16Gb DDR4 SDRAM, 2400 Mbps | Samsung
MPN: K4AAG165WB-MCRC β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $9.16 | $9.16 |
| 10 | $8.7 | $87.00 |
| 100 | $8.24 | $824.00 |
| 500 | $7.82 | $3,910.00 |
| 1,000 | $7.42 | $7,420.00 |
Drop-in alternatives for K4AAG165WB-MCRC β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
K4AAG165WB-MCTD
β Drop-Inπ Reference alternative (not in catalog)
K4AAG165WB-MCRC0CV
β Drop-Inπ Reference alternative (not in catalog)
K4AAG165WB-BCWE
β Drop-Inπ Reference alternative (not in catalog)
K4AAG165WB-MCPB
β Drop-Inπ Reference alternative (not in catalog)
K4AAG165WA-BCTD
β Drop-Inβ In Stock
$60.59 / Unit
View Datasheet βMT40A256M16GE-075E:B
β Drop-Inβ In Stock
$3.95 / Unit
View Datasheet βK4AAG165WB-MCRC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 16 Gb (2 GB) |
| Organization | 1G x 16 |
| Data Rate | 2400 Mbps (DDR4-2400) |
| Supply Voltage | 1.2 V |
| Operating Temperature | 0 C to +85 C |
| Package | 96FBGA |
| Mounting Type | Surface Mount |
| Interface | Parallel, DDR4 |
| Bank Architecture | DDR4 bank-group architecture |
| Clock Frequency | 1200 MHz (DDR4-2400) |
| Peak Bandwidth (per device) | 19.2 GB/s (estimated: 2400 Mbps x 16 bits / 8) |
| RoHS Status | Compliant (per LCSC/JLCPCB listing: FBGA-96 DRAM ROHS) |
K4AAG165WB-MCRC 96fbga Pin Configuration Guide
Complete pinout information for K4AAG165WB-MCRC (96fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K4AAG165WB-MCRC.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K4AAG165WB-MCRC is suitable for 6 applications: Laptop / Notebook Main Memory (Memory-Down), Embedded Industrial Computing, Networking and Communication Equipment, Set-Top Box and Smart TV, Edge AI Inference Boards, Test and Measurement / Logic Analyzer Host Memory.
Laptop / Notebook Main Memory (Memory-Down)
The K4AAG165WB-MCRC is a dominant soldered-down DRAM choice for consumer laptop motherboards. Its 16 Gb (2 GB) capacity per chip lets a 64-bit design reach 8 GB with just four devices and 16 GB with eight, minimizing PCB area versus SODIMM modules. The 1.2 V DDR4 rail cuts memory subsystem power roughly 20% compared with DDR3 at 1.5 V, directly extending battery runtime. Placed on the JEDEC-standard x16 96FBGA footprint, the part supports drop-in substitution with K4AAG165WB-MCTD or Micron equivalents during repair and production second-sourcing. At 2400 Mbps per pin, a 64-bit four-chip bank delivers about 76.8 GB/s aggregate bandwidth, sufficient for mainstream CPU iGPU frame buffers and application memory. BGA rework with a proper stencil makes field repair practical.
Recommended
Embedded Industrial Computing
Industrial PCs, HMI panels, and edge gateways use the K4AAG165WB-MCRC as soldered system memory where vibration and temperature exclude socketed modules. The 96FBGA package withstands mechanical stress far better than DIMM connectors, and the 1.2 V rail reduces heat inside sealed fanless enclosures. Its 2 GB-per-chip density supports Linux/RTOS images with headroom for data logging, and the x16 organization matches the 16-bit or 32-bit memory controllers common on embedded SoCs from NXP, TI, and Rockchip. At 2400 Mbps the part supplies roughly 19.2 GB/s per device, adequate for protocol processing and local analytics. Designers should verify the 0 to 85 C commercial range against enclosure derating, or select an industrial temperature suffix variant for extended environments.
Recommended
Networking and Communication Equipment
Routers, switches, and NPUs use DDR4 for packet buffers, flow tables, and control-plane memory. The K4AAG165WB-MCRC's bank-group architecture sustains sequential bursts well suited to streaming packet data at line rate, and 2 GB per chip allows deep buffering in a small board area. A 32-bit or 64-bit x16 DDR4 controller bank using four to eight of these devices provides 8 to 16 GB of buffering with about 19.2 GB/s per device of bandwidth at 2400 Mbps. The 1.2 V supply keeps thermal budgets manageable in 1U appliances with limited airflow. Follow DDR4 fly-by or short-branch routing with per-byte length matching, and program controller ODT settings per Samsung datasheet recommendations to maintain signal integrity at 1200 MHz clock rates.
Recommended
Set-Top Box and Smart TV
Broadcast and streaming set-top boxes rely on the K4AAG165WB-MCRC for application, graphics, and video buffer memory. A single 16 Gb x16 chip provides 2 GB, which comfortably holds dual 4K video pipelines, UI frameworks, and middleware in cost-optimized designs. The 96FBGA footprint fits dense main-board layouts next to the SoC, shortening the DDR4 bus for reliable 2400 Mbps operation. The 1.2 V rail reduces standby and active power, supporting ENERGY STAR-class consumption targets. x16 organization matches the 16-bit and 32-bit DDR4 controllers typical of STB SoCs. Designers should budget refresh overhead and enable DDR4 self-refresh for fast standby resume, and verify SoC MRS programming against the MCRC speed bin.
Recommended
Edge AI Inference Boards
Edge AI modules for camera analytics and sensor fusion use the K4AAG165WB-MCRC to hold quantized model weights and activation buffers alongside the SoC. One 2 GB chip keeps small CNNs and feature pipelines resident without eMMC swap latency, and 19.2 GB/s per-device bandwidth at DDR4-2400 feeds NPU MAC arrays in compact SoCs. Soldered 96FBGA mounting survives shock and vibration in mobile robots and smart cameras, while the 1.2 V rail limits thermal load inside sealed camera housings. For vision workloads, a 32-bit dual-chip bus (4 GB, ~38.4 GB/s) is a common configuration. Verify the inference SoC supports the MCRC speed bin, and place devices symmetrically around the SoC for balanced fly-by routing.
Recommended
Test and Measurement / Logic Analyzer Host Memory
Bench instruments and logic analyzers capture deep waveform traces into DDR4, making the K4AAG165WB-MCRC's 2 GB-per-chip density valuable for long record lengths. Four x16 devices on a 64-bit bus store 8 GB of acquisition data with approximately 76.8 GB/s streaming bandwidth at 2400 Mbps, sufficient for sustained high-sample-rate capture into memory. The soldered 96FBGA package resists connector wear in bench environments, and the 0 to 85 C range covers typical lab conditions. FPGA-based memory controllers should implement DDR4 write-leveling and read-training per Samsung datasheet initialization sequences. Keep VTT termination and reference voltages tightly regulated; measurement instruments are sensitive to DDR4-induced jitter on shared power planes.
Recommended
Recommended Products Summary
Engineering reference data for K4AAG165WB-MCRC β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K4AAG165WB-MCTD | K4AAG165WB-MCRC0CV | K4AAG165WB-BCWE | K4AAG165WA-BCTD | MT40A256M16GE-075E:B |
|---|---|---|---|---|---|---|
| Package | 96FBGA | 96FBGA - same | 96FBGA - same | 96FBGA - same | 96FBGA - same | 96FBGA - same (JEDEC x16 ball map) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 16 Gb (2 GB) | 16 Gb (2 GB) | 16 Gb (2 GB) | 16 Gb (2 GB) | 16 Gb (2 GB) | 16 Gb (2 GB) |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 256M x 16 |
| Data Rate | 2400 Mbps (DDR4-2400) | [DATA_NEEDED: MCTD speed bin] | 2400 Mbps class | 3200 Mbps (DDR4-3200) | 2666 Mbps class (BCTD bin) | 2666 Mbps (075E = CL19 DDR4-2666) |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0 C to +85 C | [DATA_NEEDED: per suffix bin] | 0 C to +85 C | 0 C to +85 C | 0 C to +85 C | 0 C to +85 C |
| Peak Bandwidth (per device) | 19.2 GB/s | [DATA_NEEDED] | 19.2 GB/s | 25.6 GB/s | ~21.3 GB/s | ~21.3 GB/s |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Lowest-cost standard speed bin (vs K4AAG165WB-BCWE)
- Drop-in second sourcing within Samsung family (vs K4AAG165WB-MCTD)
- Cross-brand JEDEC footprint compatibility (vs MT40A256M16GE-075E:B)
Design Notes
Follow DDR4 routing guidelines for the 96FBGA x16 device: length-match DQ0-15 to DQS within +/-25 mils (per-layer), keep the clock/strobe differential pairs tightly coupled, and use fly-by routing for multi-device buses with per-device decoupling. Place at least one 0.1 uF ceramic capacitor per VDD/VDDQ ball pair within 2 mm of the package, plus bulk 10 uF per rail. Connect all VSS balls to a solid ground plane with multiple vias to minimize return-path inductance at 1200 MHz data rates.
The K4AAG165WB-MCRC runs from a 1.2 V VDD/VDDQ rail. Estimate worst-case dynamic power per device at roughly 1 W (estimated: 2400 Mbps x 16 bits x typical DDR4 per-pin switching energy plus refresh baseline; verify against the Samsung datasheet IDD table for your access pattern). Budget VTT termination current separately - VTT can draw up to half the bus current on a loaded 64-bit bus. Use a dedicated DDR4 VTT LDO or switcher with at least 2 A capability per 64-bit bank and place sense points at the last device on the bus.
A frequent repair/rework failure is substituting a different speed bin without reprogramming the SoC memory controller. The MCRC suffix is a DDR4-2400, 0 to 85 C commercial bin; if you populate a K4AAG165WB-BCWE (3200 Mbps) the board generally works, but populating a slower bin than the controller expects causes training failures. Also, during BGA rework, profile the 96FBGA with a lead-free reflow ramp (peak ~245-250 C) and inspect with X-ray for shorts on the 0.5 mm-class ball pitch - hidden head-in-pillow defects are common with reused balls.
At 2400 Mbps, DDR4 write leveling and read training are mandatory. Enable the controller's ZQ calibration and program ODT values per the Samsung datasheet recommendation for a single-rank x16 configuration. For two-device fly-by buses, keep the trace stub from the series termination resistor under 100 mils and simulate eye diagrams at the far-end device. Excessive ISI shows up as marginal read margins during temperature cycling, so validate across the full 0 to 85 C range, not just room temperature.
Compliance Information
RoHS compliance stated in LCSC/JLCPCB listing ('FBGA-96 DRAM ROHS'). Other compliance attributes not stated in provided data.
