MOSFETs
Products (57)
FDA803S-6DY - 3A, 40V Automotive Grade MOSFET | onsemi
The FDA803S-6DY is an automotive-grade N-channel power MOSFET from onsemi, designed for high-efficiency power switching in automotive and industrial applications. It features a drain-to-source voltage (VDS) of 40V and a continuous drain current (ID) of 3A, making it suitable for load switching, DC-DC converters, and motor control circuits. The device is housed in a compact SO-8 package, offering a small footprint for space-constrained PCB designs. A power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are essential components in power management systems, serving as switches in DC-DC converters, load switches, and motor drivers. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the FDA803S-6DY include a low on-state resistance (RDS(on)) of [DATA_NEEDED: RDS(on)] at 10V gate drive, ensuring minimal conduction losses. The device supports a gate threshold voltage (VGS(th)) of [DATA_NEEDED: VGS(th)], and a maximum power dissipation of [DATA_NEEDED: Power Dissipation]. It is AEC-Q100 qualified, meeting stringent automotive reliability standards, and is RoHS compliant, ensuring environmental safety. The FDA803S-6DY utilizes onsemi's advanced trench technology, which reduces on-resistance and improves switching performance. The device features a fast switching speed, making it ideal for high-frequency applications. Its robust thermal performance, with a junction-to-ambient thermal resistance of [DATA_NEEDED: Thermal Resistance], allows for efficient heat dissipation in demanding environments. Typical applications include automotive body control modules, LED lighting, power distribution, and DC-DC converters. In automotive body control, the FDA803S-6DY can be used as a high-side or low-side switch for controlling loads such as relays, solenoids, and motors. Its low RDS(on) minimizes voltage drop and power loss, improving overall system efficiency. When designing with this device, ensure adequate gate drive voltage to fully enhance the MOSFET and minimize conduction losses. Consider the thermal environment and provide sufficient copper area on the PCB for heat sinking. The device's SO-8 package is compatible with standard surface-mount assembly processes, facilitating easy integration into existing designs.
STB100N10F7 - 100V, 100A N-Channel Power MOSFET | STMicroelectronics
The STB100N10F7 is an N-channel Power MOSFET from STMicroelectronics, designed for high-current switching applications. It features a drain-to-source voltage (VDS) of 100V and a continuous drain current (ID) of 100A at 25°C, making it suitable for power conversion, motor control, and automotive systems. The device is housed in a D2PAK (TO-263) package, which provides excellent thermal performance and is compatible with standard surface-mount assembly processes. A Power MOSFET is a type of field-effect transistor optimized for high-power switching and amplification. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, allowing efficient switching at high voltages and currents. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in DC-DC converters, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, each tailored for specific power-handling requirements. Key features of the STB100N10F7 include a low on-state resistance (RDS(on)) of typically 8.5 mΩ at VGS = 10V, which minimizes conduction losses and improves efficiency. The device also offers a fast switching speed with a total gate charge (Qg) of 110 nC, enabling high-frequency operation. The MOSFET is avalanche-rated, with an avalanche energy (EAS) of 400 mJ, ensuring robustness in inductive load switching. Additionally, it features a wide operating temperature range from -55°C to +175°C, making it suitable for harsh environments. The STB100N10F7 utilizes STMicroelectronics' advanced strip-layout technology, which reduces on-state resistance and parasitic capacitances. This technology enhances the device's switching performance and thermal stability, allowing it to handle high current densities without compromising reliability. The device also includes an integrated gate-source ESD protection, improving its robustness during handling and assembly. Typical applications include DC-DC converters, motor control circuits, power supplies, and automotive systems such as electric power steering and battery management. The high current rating and low RDS(on) make it ideal for synchronous rectification in switch-mode power supplies, where efficiency is critical. In motor control, the fast switching speed and avalanche capability ensure reliable operation under inductive load conditions. When designing with this device, ensure adequate gate drive voltage (typically 10V) to achieve the lowest RDS(on). Proper PCB layout with short, wide traces for high-current paths is essential to minimize parasitic inductance and resistance. Additionally, consider thermal management by using the exposed pad of the D2PAK package with a sufficient copper area for heat dissipation.
STB120N10F7 - 120A, 100V N-Channel Power MOSFET | STMicroelectronics
The STB120N10F7 is an N-channel Power MOSFET manufactured by STMicroelectronics, designed for high-current switching applications. It features a drain-to-source voltage (VDS) of 100V and a continuous drain current (ID) of 120A at 25°C, making it suitable for demanding power conversion and motor control circuits. The device is housed in a D2PAK (TO-263) package, which provides excellent thermal performance and is widely used in surface-mount power applications. A Power MOSFET is a type of field-effect transistor optimized for power switching and amplification. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in power electronics, serving as switches in DC-DC converters, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. The STB120N10F7 belongs to the STripFET F7 series, which is known for low on-resistance and fast switching. Key features of the STB120N10F7 include a very low on-resistance (RDS(on)) of typically 6.5 mΩ at VGS = 10V, which minimizes conduction losses and improves efficiency. The device also offers a high avalanche ruggedness, with an avalanche energy rating of 400 mJ, ensuring reliable operation under inductive load switching. The gate charge is optimized for efficient high-frequency operation, and the device is RoHS compliant and halogen-free, meeting modern environmental standards. The STB120N10F7 utilizes STMicroelectronics' advanced STripFET F7 technology, which employs a deep-groove structure to reduce on-resistance and parasitic capacitances. This results in improved figure of merit (FOM) compared to previous generations, enabling higher switching frequencies and lower power dissipation. The device's low thermal resistance (junction-to-case) of 0.5°C/W allows efficient heat transfer to the PCB, supporting high current operation with proper thermal management. Typical applications include DC-DC converters, motor control, power supplies, and battery management systems. In a DC-DC converter, the STB120N10F7 can be used as a synchronous rectifier or main switch, where its low RDS(on) reduces conduction losses and its fast switching minimizes switching losses. In motor control, it can drive DC motors or brushless DC motors with high efficiency, thanks to its high current capability and ruggedness. When designing with this device, ensure adequate gate drive voltage (at least 10V) to achieve the lowest on-resistance. The gate-source voltage must not exceed ±20V to prevent oxide breakdown. Proper PCB layout with wide copper traces and thermal vias is essential to dissipate heat effectively, especially at high currents. Consider using a gate resistor to control switching speed and reduce EMI.
STB140N4F8 - 40V, 120A N-Channel Power MOSFET | STMicroelectronics
The STB140N4F8 is an N-channel Power MOSFET from STMicroelectronics, designed for high-current switching applications. It features a drain-source voltage (VDS) of 40V and a continuous drain current (ID) of 120A at 25°C, making it suitable for demanding power conversion and motor control circuits. The device is housed in a D2PAK (TO-263) package, which provides excellent thermal performance and is widely used in automotive and industrial applications. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, offering high input impedance and fast switching speeds. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in DC-DC converters, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STB140N4F8 include a low on-resistance (RDS(on)) of typically 4.5 mΩ at VGS=10V, which minimizes conduction losses and improves efficiency. The device also offers a high avalanche ruggedness, with an avalanche energy rating of 200 mJ, ensuring reliable operation under inductive load switching. The gate charge (Qg) is 60 nC, enabling fast switching and reduced driver requirements. The operating junction temperature range is -55°C to +175°C, suitable for harsh environments. The STB140N4F8 utilizes STMicroelectronics' advanced strip layout technology, which reduces on-resistance and parasitic capacitances, enhancing switching performance. The device is fully RoHS compliant and halogen-free, meeting modern environmental standards. Its robust design includes built-in protection against electrostatic discharge (ESD) up to 2kV (HBM), improving reliability in manufacturing and handling. Typical applications include DC-DC converters, motor control, power supplies, and battery management systems. In automotive applications, it is used in electric power steering, engine control units, and LED lighting. The low RDS(on) and high current capability make it ideal for synchronous rectification in high-efficiency power converters. When designing with this MOSFET, ensure proper gate drive voltage (10V recommended) to achieve minimum on-resistance. The device is not intended for linear operation; use it in switching applications to avoid thermal runaway. Adequate PCB copper area and thermal vias are essential to dissipate heat effectively, especially at high currents.
STB21N65M5 - 650V N-Channel Power MOSFET | STMicroelectronics
The STB21N65M5 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M5 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 650V and a continuous drain current of 17A at 25°C, with a low on-resistance of 0.19 ohm typical. The device is housed in a D2PAK (TO-263) package, which is widely used in surface-mount power applications. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in power electronics, serving as switches in DC-DC converters, AC-DC power supplies, motor drives, and many other applications. They are preferred for their fast switching speeds, high input impedance, and low drive power requirements. Key features of the STB21N65M5 include a low gate charge (Qg) of 45 nC, which enables fast switching and reduces switching losses. The device also has a low thermal resistance junction-to-case of 1.1 °C/W, allowing efficient heat dissipation. The MDmesh M5 technology provides an excellent figure of merit (RDS(on) x Qg), making it suitable for high-frequency applications. The device is RoHS compliant and halogen-free, meeting modern environmental standards. The STB21N65M5 utilizes ST's MDmesh M5 vertical structure, which reduces on-resistance and gate charge simultaneously, improving efficiency in power conversion. The device is avalanche-rated, with an avalanche energy of 400 mJ, ensuring robustness in harsh switching conditions. The integrated body diode has a fast reverse recovery time, reducing losses in bridge topologies. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and solar inverters. The 650V rating makes it suitable for universal input (85-265V AC) power supplies, where the device must withstand high voltage transients. The low on-resistance minimizes conduction losses, improving overall system efficiency. When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. The gate-source voltage must not exceed ±25V to prevent oxide breakdown. Adequate heat sinking is required for high-current operation, and a snubber circuit may be needed to limit voltage spikes during switching.
STB30N60DM2AG - 600V 30A N-Channel MDmesh DM2 Power MOSFET | STMicroelectronics
The STB30N60DM2AG is an N-channel Power MOSFET manufactured by STMicroelectronics, featuring a 600V drain-source breakdown voltage and a continuous drain current of 30A at 25°C. It is housed in a D2PAK (TO-263) package, designed for high-efficiency power conversion applications. The device utilizes ST's MDmesh DM2 technology, which provides low on-resistance and fast switching performance, making it suitable for demanding power supply and motor control circuits. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in switch-mode power supplies, DC-DC converters, and motor drives, where they handle high voltages and currents with minimal power loss. They are part of the broader family of power semiconductor devices, which also includes IGBTs and thyristors, but MOSFETs are preferred for high-frequency switching due to their fast switching speeds and low drive power requirements. Key features of the STB30N60DM2AG include a low typical on-resistance of 0.099 ohm, a wide operating junction temperature range from -55°C to +150°C, and a gate charge of 60 nC. The device is RoHS compliant and halogen-free, meeting modern environmental standards. Its MDmesh DM2 technology reduces conduction and switching losses, improving overall system efficiency. The D2PAK package offers excellent thermal performance with a junction-to-case thermal resistance of 0.5°C/W, enabling effective heat dissipation in high-power applications. The STB30N60DM2AG is built on a planar stripe layout with a proprietary process that minimizes the on-resistance per unit area. The device features an intrinsic body diode with a fast reverse recovery time, which is beneficial in bridge topologies. The gate charge characteristics are optimized for low gate drive losses, and the device is designed to withstand high dv/dt rates, ensuring robust operation in harsh environments. The MDmesh DM2 series is known for its ruggedness and reliability, making it a preferred choice for industrial applications. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, DC-DC converters, and motor control in industrial and automotive systems. The device's high voltage rating and low on-resistance make it ideal for 400V bus systems and 3-phase inverter stages. In motor control, the fast switching capability reduces electromagnetic interference (EMI) and improves efficiency. When designing with this MOSFET, ensure proper gate drive voltage (typically 10V to 15V) to fully enhance the channel and minimize conduction losses. A gate resistor may be needed to control switching speed and reduce ringing. Adequate heat sinking is essential to keep the junction temperature within limits, especially at high currents. The device is not AEC-Q100 qualified, so for automotive applications, consider the AEC-Q101 qualified version STB30N60DM2AG-1.
STB40N60M2 - 650V 40A N-Channel Power MOSFET | STMicroelectronics
The STB40N60M2 is an N-channel Power MOSFET from STMicroelectronics' MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 650V and a continuous drain current of 40A at 25°C, making it suitable for demanding power switching tasks. The device is housed in a D2PAK (TO-263) package, which provides excellent thermal performance and is widely used in industrial and consumer power supplies. A Power MOSFET is a type of field-effect transistor optimized for high-power switching and amplification. It operates by controlling the flow of current through a semiconductor channel using an electric field, offering fast switching speeds and low on-resistance compared to bipolar transistors. Power MOSFETs are fundamental building blocks in power electronics, forming the basis of switch-mode power supplies, motor drives, and inverters. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STB40N60M2 include a low on-resistance (RDS(on)) of typically 0.095 ohm, which minimizes conduction losses and improves overall efficiency. The device also offers a wide safe operating area (SOA) and is avalanche-rated, ensuring robustness in harsh operating conditions. Its fast switching characteristics, with typical rise and fall times in the nanosecond range, enable high-frequency operation, reducing the size of magnetic components in power converters. The STB40N60M2 utilizes STMicroelectronics' MDmesh M2 technology, which combines a vertical structure with a deep trench gate to achieve low on-resistance and reduced gate charge. This technology enhances the device's figure of merit (FOM), balancing conduction and switching losses for optimal performance in hard-switching topologies. The device also features a built-in diode with fast recovery, reducing reverse recovery losses in bridge configurations. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, solar inverters, and motor control systems. In an SMPS, the STB40N60M2 can be used as the main switching element in a flyback or forward converter, where its high breakdown voltage and low on-resistance contribute to high efficiency and reliability. In PFC circuits, it enables near-unity power factor by switching at high frequency with minimal losses. When designing with this device, ensure proper gate drive voltage (typically 10V to 15V) to fully enhance the channel and minimize on-resistance. Adequate heat sinking is essential, as power dissipation can be significant at high currents. The D2PAK package's exposed tab should be soldered to a large copper area for effective thermal management.
STB60NF06T4 - 60V, 60A N-Channel Power MOSFET | STMicroelectronics
The STB60NF06T4 is an N-channel Power MOSFET from STMicroelectronics, designed for high-current switching applications. It features a drain-source voltage (VDS) of 60V, a continuous drain current (ID) of 60A at 25°C, and a low on-resistance (RDS(on)) of typically 14 mΩ at VGS=10V. The device is housed in a D2PAK (TO-263) package, which provides excellent thermal performance and is suitable for surface-mount assembly. A Power MOSFET is a type of field-effect transistor optimized for power switching and amplification. It operates by controlling the flow of current between the drain and source terminals through an electric field applied at the gate. Power MOSFETs are widely used in power supplies, motor drives, and automotive applications due to their fast switching speed, high input impedance, and low conduction losses. They are a key component in the power management hierarchy, from discrete transistors to integrated power modules. Key features of the STB60NF06T4 include a very low on-resistance of 14 mΩ, which minimizes conduction losses and improves efficiency in high-current paths. The device also offers a high avalanche ruggedness, with an avalanche energy rating of 300 mJ, making it suitable for applications with inductive loads. The gate charge is 60 nC, enabling fast switching and reduced switching losses. The device is RoHS compliant and halogen-free, meeting modern environmental standards. The STB60NF06T4 utilizes STMicroelectronics' advanced PowerMESH™ technology, which provides a superior figure of merit (FOM) compared to conventional MOSFETs. This technology reduces the on-resistance and gate charge, resulting in lower power dissipation and improved thermal performance. The device also features a built-in Zener diode for ESD protection, enhancing its robustness in harsh environments. Typical applications include DC-DC converters, motor control, power supplies, and automotive systems such as electric power steering and battery management. The low RDS(on) and high current capability make it ideal for synchronous rectification and load switching. In automotive applications, the device's ability to handle high surge currents and its wide operating temperature range (-55°C to 175°C) ensure reliable operation. When designing with the STB60NF06T4, it is important to consider the thermal management. The D2PAK package has a thermal resistance of 62.5°C/W (junction-to-ambient) and 1.0°C/W (junction-to-case). For high-current applications, a heatsink or adequate PCB copper area is required to keep the junction temperature within safe limits. Additionally, proper gate drive voltage (typically 10V) is necessary to achieve the lowest on-resistance.
STB80NF55-06T4 - 80A, 55V N-Channel Power MOSFET | STMicroelectronics
The STB80NF55-06T4 is an N-channel Power MOSFET from STMicroelectronics, designed for high-current switching applications. It features a drain-source voltage (VDS) of 55V and a continuous drain current (ID) of 80A at 25°C, making it suitable for power management, motor control, and DC-DC conversion. The device is housed in a D2PAK (TO-263) package, which provides excellent thermal performance and is compatible with standard surface-mount assembly processes. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are fundamental components in power electronics, serving as switches in power supplies, motor drives, and battery management systems. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. The STB80NF55-06T4 belongs to the STripFET family, known for low on-resistance and fast switching. Key features of the STB80NF55-06T4 include a very low on-resistance (RDS(on)) of typically 6.5 mΩ at VGS=10V, which minimizes conduction losses. The device offers a gate charge (Qg) of 80 nC, enabling efficient high-frequency operation. It has a wide operating temperature range from -55°C to +175°C, ensuring reliability in harsh environments. The MOSFET is RoHS compliant and halogen-free, meeting modern environmental standards. The STB80NF55-06T4 utilizes STMicroelectronics' advanced STripFET technology, which reduces on-resistance and parasitic capacitances. This results in improved switching performance and lower power dissipation. The device includes an integrated body diode with fast recovery characteristics, making it suitable for bridge topologies and inductive load switching. The D2PAK package offers a low thermal resistance of 1.0°C/W (junction-to-case), allowing efficient heat dissipation. Typical applications include DC-DC converters, motor control circuits, power supplies, and battery management systems. In DC-DC converters, the low RDS(on) and fast switching reduce losses, improving efficiency. For motor control, the high current capability and ruggedness handle inductive loads and inrush currents. In power supplies, the device's high voltage rating and current capacity make it ideal for primary-side switching. When designing with this MOSFET, ensure proper gate drive voltage (at least 10V) to achieve minimum on-resistance. Consider the total gate charge and switching frequency to optimize efficiency. Adequate PCB copper area and thermal vias are essential to dissipate heat, especially at high currents. The device's SOA (Safe Operating Area) should be respected to avoid thermal runaway.
STB80NF55-08AG - 55V 80A Automotive N-Channel MOSFET | STMicroelectronics
The STB80NF55-08AG is an automotive-grade N-channel Power MOSFET from STMicroelectronics, built using the proprietary STripFET process. It delivers a drain-to-source voltage (VDS) of 55V, a continuous drain current (ID) of 80A at case temperature (Tc), and a typical on-resistance (RDS(on)) of 6.5 mΩ. The device is housed in a D2PAK (TO-263) surface-mount package, designed for high-efficiency power conversion in demanding automotive and industrial environments. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. In the hierarchy of power electronics, a Power MOSFET is a type of discrete semiconductor, which falls under the broader category of semiconductor devices. The STripFET process used in this device is specifically engineered to minimize input capacitance and gate charge, enabling faster switching speeds and reduced switching losses compared to conventional MOSFETs. Key features of the STB80NF55-08AG include 100% avalanche testing, ensuring ruggedness under extreme conditions, and low gate charge (Qg) for efficient gate drive. The device also exhibits low gate input resistance, which contributes to stable high-frequency operation. These characteristics make it suitable for use as a primary switch in advanced high-efficiency isolated DC-DC converters, particularly in telecom and computer applications, as well as in automotive systems requiring AEC-Q101 qualification. Technically, the STripFET process achieves extremely high packing density, resulting in low on-resistance and rugged avalanche characteristics. The device is rated for a maximum power dissipation of 300W at Tc, and it operates over a junction temperature range of -55°C to +175°C. The D2PAK package provides excellent thermal performance, with a thermal resistance (junction-to-case) of [DATA_NEEDED: thermal resistance value] °C/W, enabling efficient heat transfer to the PCB or heatsink. Typical applications include automotive engine control units (ECUs), DC-DC converters, motor control, and battery management systems. The device's low on-resistance minimizes conduction losses, while its fast switching reduces switching losses, making it ideal for high-frequency power conversion. In automotive applications, the AEC-Q101 qualification ensures reliability under harsh operating conditions, including temperature extremes and vibration. When designing with this MOSFET, it is critical to ensure adequate gate drive voltage to fully enhance the channel and minimize on-resistance. Additionally, proper PCB layout with low-inductance gate and source paths is essential to prevent parasitic oscillations and ensure reliable switching at high frequencies.
STB80NF55L-08-1 - 80A, 55V N-Channel Power MOSFET | STMicroelectronics
The STB80NF55L-08-1 is an N-channel Power MOSFET from STMicroelectronics, designed for high-current switching applications. It features a drain-to-source voltage (VDS) of 55V and a continuous drain current (ID) of 80A at 25°C, making it suitable for power management in automotive, industrial, and consumer electronics. The device is housed in a D2PAK (TO-263) package, which provides excellent thermal performance and is compatible with standard surface-mount assembly processes. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, allowing efficient switching at high voltages and currents. Power MOSFETs are fundamental components in power electronics, serving as switches in DC-DC converters, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, and are essential for managing power flow in modern electronic systems. Key features of the STB80NF55L-08-1 include a low on-state resistance (RDS(on)) of typically 8 mΩ at VGS=10V, which minimizes conduction losses and improves efficiency. The device also offers a fast switching speed, with typical rise and fall times in the nanosecond range, enabling high-frequency operation. The gate charge is optimized for low drive requirements, and the device is designed to withstand high-energy pulses in avalanche mode, making it robust for demanding applications. The STB80NF55L-08-1 utilizes STMicroelectronics' advanced strip layout technology, which reduces internal parasitic inductance and resistance, enhancing switching performance and thermal stability. The device features a rugged design with built-in protection against overcurrent and overvoltage conditions, ensuring reliable operation in harsh environments. The D2PAK package includes an exposed pad for improved heat dissipation, allowing the MOSFET to handle high power dissipation without external heatsinks in many applications. Typical applications include DC-DC converters, motor control, power supplies, and battery management systems. In automotive applications, it is used in electric power steering, engine control units, and LED lighting. In industrial settings, it is employed in robotics, factory automation, and uninterruptible power supplies. The low RDS(on) and high current capability make it ideal for high-efficiency power conversion. When designing with this MOSFET, ensure adequate gate drive voltage (typically 10V) to achieve the lowest RDS(on). The device can be driven directly by logic-level controllers if the threshold voltage is suitable, but for full performance, a dedicated gate driver is recommended. Proper PCB layout with short, wide traces for high-current paths and adequate thermal vias under the exposed pad is essential to minimize parasitic inductance and maximize heat dissipation.
STB9N60M2 - 600V N-Channel Power MOSFET | STMicroelectronics
The STB9N60M2 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 7A at 25°C, with a low on-resistance of 0.55 ohm typical. The device is housed in a D2PAK (TO-263) package, which provides excellent thermal performance for surface-mount designs. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the flow of current through a semiconductor channel using an electric field, allowing for fast switching speeds and low conduction losses. Power MOSFETs are fundamental building blocks in switch-mode power supplies, motor drives, and lighting systems, where they function as electronic switches that efficiently regulate power flow. They are part of the broader family of discrete semiconductors, which also includes diodes, IGBTs, and thyristors. Key features of the STB9N60M2 include a low gate charge (Qg) of 18 nC, which reduces switching losses and enables high-frequency operation, and a fast body diode with low reverse recovery time, making it suitable for bridge topologies. The device also offers a wide operating junction temperature range from -55°C to +150°C, ensuring reliability in harsh environments. Its avalanche ruggedness is rated at 300 mJ, providing robustness against overvoltage transients. The MDmesh M2 technology utilizes a vertical structure with a reduced on-resistance and improved switching performance compared to conventional planar MOSFETs. This is achieved through a charge-balanced design that enhances the breakdown voltage capability while maintaining low conduction losses. The STB9N60M2 is optimized for hard-switching applications, where its low gate charge and fast switching times minimize energy losses. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and industrial motor control. In an SMPS, the STB9N60M2 acts as the primary switching element, converting AC mains to regulated DC output with high efficiency. Its 600V rating provides ample margin for universal input voltage ranges (85-265V AC), while the low on-resistance reduces conduction losses, improving overall system efficiency. When designing with this device, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. A gate resistor may be needed to control switching speed and reduce EMI. Adequate heat sinking or PCB copper area is essential to keep the junction temperature within limits, especially at high currents. The D2PAK package offers a low thermal resistance of 62.5°C/W, allowing for efficient heat dissipation.
STD10N60DM2 - 600V 10A N-Channel MDmesh DM2 MOSFET | STMicroelectronics
The STMicroelectronics STD10N60DM2 is an N-channel Power MOSFET based on the advanced MDmesh DM2 technology, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 10A at 25°C, with a low on-resistance of 0.45Ω typical. The device is housed in a DPAK (TO-252) package, offering a compact surface-mount solution for space-constrained designs. A power MOSFET is a type of field-effect transistor designed to handle significant power levels, typically used as a switch or amplifier in power electronics. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are fundamental components in switch-mode power supplies, motor drives, and lighting systems, where they enable efficient power conversion and control. They are part of the broader family of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, each serving distinct roles in power management. Key features of the STD10N60DM2 include a low gate charge (Qg) of 18nC, which reduces switching losses and enables high-frequency operation, and a fast body diode with low reverse recovery charge, improving reliability in bridge topologies. The device also offers a wide operating temperature range from -55°C to +150°C, making it suitable for harsh environments. Its avalanche ruggedness is rated at 4.5A, ensuring robustness under extreme conditions. The MDmesh DM2 technology combines a vertical structure with a deep trench gate, resulting in a favorable trade-off between on-resistance and switching performance. This makes the STD10N60DM2 particularly effective in applications requiring high efficiency and compact design, such as power factor correction (PFC) circuits, flyback converters, and LLC resonant converters. The low thermal resistance of the DPAK package (3.3°C/W junction-to-case) allows efficient heat dissipation, enabling reliable operation at high power levels. Typical applications include switch-mode power supplies (SMPS) for consumer electronics, LED lighting drivers, and industrial power converters. In an SMPS, the MOSFET acts as the primary switching element, controlling the transfer of energy from the input to the output. Its low on-resistance minimizes conduction losses, while the low gate charge reduces switching losses, contributing to overall system efficiency. When designing with the STD10N60DM2, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. A gate resistor may be needed to control switching speed and reduce EMI. Additionally, adequate PCB copper area and thermal vias are recommended to keep the junction temperature within safe limits, especially in high-current applications.
STD15N60M2 - 600V 15A N-Channel Power MOSFET | STMicroelectronics
The STMicroelectronics STD15N60M2 is an N-channel Power MOSFET built on the advanced MDmesh M2 technology, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 15A at 25°C, with a low on-resistance of 0.29 ohm typical. The device is housed in a DPAK (TO-252) package, which is widely used in surface-mount power applications. A power MOSFET is a type of field-effect transistor designed to handle significant power levels in switching and amplification circuits. It operates by controlling the flow of current through a semiconductor channel using an electric field, offering fast switching speeds and high efficiency. Power MOSFETs are essential components in power electronics, serving as switches in power supplies, motor drives, and inverters. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STD15N60M2 include a very low gate charge (Qg) of 28 nC, which reduces switching losses and enables high-frequency operation. The device also offers a low gate input resistance, improving switching performance. Its 600V breakdown voltage makes it suitable for applications operating from high-voltage rails, such as 380V AC-DC converters and 3-phase inverters. The DPAK package provides excellent thermal performance with a junction-to-case thermal resistance of 2.5°C/W, allowing efficient heat dissipation. The STD15N60M2 utilizes the MDmesh M2 technology, which combines a vertical structure with a charge-balanced epitaxial layer to achieve low on-resistance and reduced switching losses. This technology is optimized for high-voltage applications, providing a good trade-off between conduction and switching performance. The device is fully RoHS compliant and halogen-free, meeting modern environmental standards. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and motor control systems. In an SMPS, the MOSFET acts as the primary switching element, controlling the transfer of energy from the input to the output. Its low on-resistance minimizes conduction losses, while its fast switching reduces transition losses, improving overall efficiency. When designing with the STD15N60M2, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. The device has a maximum gate-source voltage of ±25V, so avoid exceeding this limit. Also, consider the total power dissipation and provide adequate heatsinking or PCB copper area to keep the junction temperature within the rated range of -55°C to +150°C.
STD20N60DM2 - 600V 20A N-Channel MDmesh DM2 MOSFET | STMicroelectronics
The STMicroelectronics STD20N60DM2 is an N-channel Power MOSFET based on the advanced MDmesh DM2 technology, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 20A at 25°C, with a low on-resistance of 0.19 ohm typical. The device is housed in a DPAK (TO-252) package, which is widely used in surface-mount power applications. What is a Power MOSFET? A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of high power levels. It operates by controlling the conductivity of a channel between the drain and source terminals via an insulated gate. In the hierarchy of power semiconductors, a Power MOSFET is a type of discrete semiconductor, which falls under the broader category of semiconductor devices. The MDmesh DM2 technology is a proprietary vertical structure that reduces on-resistance and gate charge, improving switching performance and efficiency. Key features of the STD20N60DM2 include a low gate charge (Qg) of 45 nC typical, which enables fast switching and reduced driver losses. The device also offers a wide operating junction temperature range from -55°C to +150°C, making it suitable for demanding environments. Its avalanche ruggedness is rated at 400 mJ, ensuring reliability under inductive load switching conditions. The DPAK package provides a compact footprint with a thermal resistance of 2.5°C/W (junction-to-case), facilitating heat dissipation. Technically, the MDmesh DM2 technology employs a multi-drain structure that reduces the specific on-resistance (RDS(on) x area) compared to conventional planar MOSFETs. This results in lower conduction losses and improved thermal performance. The device is fully RoHS compliant and halogen-free, meeting modern environmental standards. Its gate threshold voltage is typically 3V, allowing direct interfacing with logic-level drivers. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and DC-DC converters. In an SMPS, the STD20N60DM2 can be used as the main switching element in a flyback or forward converter topology, where its low RDS(on) minimizes conduction losses and its fast switching reduces switching losses. For PFC circuits, the high breakdown voltage and avalanche ruggedness ensure reliable operation in boost converters operating from universal AC input. When designing with this device, ensure proper gate drive voltage (typically 10V to 15V) to fully enhance the channel and minimize on-resistance. A gate resistor may be needed to control switching speed and reduce EMI. Adequate heatsinking or PCB copper area is essential to keep the junction temperature within limits, especially at high load currents.
STD5N52K3 - 5A, 525V N-Channel Power MOSFET | STMicroelectronics
The STMicroelectronics STD5N52K3 is an N-channel Power MOSFET designed for high-voltage switching applications. It features a drain-source voltage (VDS) of 525V, a continuous drain current (ID) of 5A at 25°C, and a low on-resistance (RDS(on)) of 1.4Ω typical. The device is housed in a DPAK (TO-252) package, which is widely used in surface-mount power applications. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, allowing efficient switching at high voltages and currents. Power MOSFETs are fundamental components in power management systems, serving as switches in DC-DC converters, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STD5N52K3 include a 525V drain-source breakdown voltage, a 5A continuous drain current, and a low gate charge (Qg) of 15nC typical, which enables fast switching and reduced switching losses. The device also offers a low threshold voltage (VGS(th)) of 3V to 5V, making it compatible with standard gate drive circuits. The DPAK package provides excellent thermal performance with a junction-to-ambient thermal resistance of 100°C/W, allowing for efficient heat dissipation in compact designs. The STD5N52K3 utilizes STMicroelectronics' MDmesh K3 technology, which combines a vertical structure with a deep trench gate to achieve low on-resistance and high breakdown voltage. This technology reduces conduction losses and improves switching performance, making the device suitable for high-frequency applications. The device also features built-in protection against electrostatic discharge (ESD) and is RoHS compliant, ensuring environmental safety. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and motor control systems. In SMPS, the STD5N52K3 can be used as the main switching element in flyback or forward converters, where its high voltage rating and low on-resistance contribute to high efficiency. In motor control, it can drive small to medium motors in industrial and automotive applications, providing reliable switching at high voltages. When designing with the STD5N52K3, ensure adequate gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. Also, consider the thermal design, as power dissipation at high currents can be significant. Proper PCB layout with sufficient copper area for heat sinking is recommended to maintain junction temperature within safe limits.
STF12N60M2 - 12A, 600V N-Channel Power MOSFET | STMicroelectronics
The STF12N60M2 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 12A at 25°C, with a low on-resistance of 0.38Ω typical. The device is housed in a TO-220FP (full-pack) package, which provides electrical isolation and simplifies heatsinking. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in switch-mode power supplies, motor drives, and lighting systems, where they handle high voltages and currents with minimal power loss. They are part of the broader family of discrete semiconductors, which also includes diodes, IGBTs, and thyristors. Key features of the STF12N60M2 include a low gate charge (Qg) of 25nC, which enables fast switching and reduces driver losses, and a high dv/dt capability for robust performance in hard-switching topologies. The device also features an intrinsic body diode with a fast recovery time, making it suitable for bridge circuits and inductive loads. The TO-220FP package offers a thermal resistance of 3.5°C/W, allowing efficient heat dissipation without an additional insulating pad. The MDmesh M2 technology utilizes a vertical structure with a reduced on-resistance and improved switching performance compared to conventional planar MOSFETs. This results in lower conduction and switching losses, enhancing overall system efficiency. The device is avalanche-rated, with an avalanche energy of 400mJ, ensuring reliability under extreme conditions. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and motor control. In an SMPS, the STF12N60M2 can be used as the main switching element in a flyback or forward converter, where its low RDS(on) minimizes conduction losses and its fast switching reduces transition losses. When designing with this device, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. The gate-source voltage must not exceed ±25V to prevent oxide breakdown. Additionally, consider the thermal impedance of the TO-220FP package and provide adequate heatsinking for high-power applications.
STF13N95K3 - 13A, 950V N-Channel Power MOSFET | STMicroelectronics
The STF13N95K3 is an N-channel Power MOSFET from STMicroelectronics, designed for high-voltage power switching applications. It features a drain-source breakdown voltage (BVdss) of 950V and a continuous drain current (ID) of 13A at 25°C, making it suitable for demanding power conversion circuits. The device is housed in a TO-220FP (full-pack) package, which provides electrical isolation and simplifies heatsinking in high-voltage designs. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are the backbone of modern power management systems, including switch-mode power supplies (SMPS), motor drives, and inverters, due to their fast switching speeds, high input impedance, and low on-state resistance. They are part of the broader family of discrete semiconductors, which also includes IGBTs, thyristors, and bipolar transistors, each suited to specific voltage and current ranges. Key features of the STF13N95K3 include a low on-resistance (RDS(on)) of typically 0.55 ohm at VGS=10V, a gate charge (Qg) of 45 nC, and a wide operating temperature range from -55°C to +150°C. The device is RoHS compliant and halogen-free, meeting modern environmental standards. Its avalanche ruggedness is rated at 400 mJ, ensuring reliable operation under inductive load switching conditions. Technically, the STF13N95K3 is built using STMicroelectronics' MDmesh K3 technology, which combines a vertical structure with a deep trench gate to achieve low on-resistance and high breakdown voltage simultaneously. This technology reduces conduction losses and improves switching performance, making the device ideal for high-efficiency power converters. The TO-220FP package offers a thermal resistance of 3.5°C/W (junction-to-case), allowing effective heat dissipation with an appropriate heatsink. Typical applications include switch-mode power supplies for industrial equipment, high-voltage DC-DC converters, power factor correction (PFC) circuits, and lighting systems. The device's high voltage rating and current capability make it particularly suitable for offline power supplies operating from 380V AC or higher. When designing with the STF13N95K3, ensure proper gate drive voltage (at least 10V) to achieve the specified low on-resistance. The full-pack package eliminates the need for an insulating pad, but adequate heatsinking is still required to keep the junction temperature within limits. Consider the gate charge when designing the gate drive circuit to minimize switching losses.
STF18N60M2 - 650V 12A N-Channel Power MOSFET | STMicroelectronics
The STF18N60M2 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 650V and a continuous drain current of 12A at 25°C, with a low on-resistance of 0.29 ohm typical. The device is housed in a TO-220FP (full-pack) package, which provides electrical isolation and simplifies heatsinking. A power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the flow of current between the drain and source terminals through an electric field applied at the gate. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in DC-DC converters, AC-DC power supplies, motor drives, and lighting systems. They are preferred for their fast switching speeds, high input impedance, and low conduction losses compared to bipolar transistors. Key features of the STF18N60M2 include a low gate charge (Qg) of 28 nC, which reduces switching losses and enables high-frequency operation. The device also offers a wide operating junction temperature range from -55°C to +150°C, making it suitable for demanding environments. Its avalanche ruggedness is rated at 450 mJ, ensuring reliability under inductive load switching. The TO-220FP package has a thermal resistance of 3.5°C/W (junction-to-case), allowing efficient heat dissipation. The MDmesh M2 technology combines a vertical structure with a buried strip, reducing on-resistance and capacitance. This results in improved figure of merit (RDS(on) x Qg) compared to conventional MOSFETs, enhancing overall system efficiency. The device is fully RoHS compliant and halogen-free, meeting modern environmental standards. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and solar inverters. In a 100W PFC boost converter, the STF18N60M2 can operate at 100kHz with minimal switching losses, improving efficiency by up to 1% compared to older generations. When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve full enhancement. The gate-source voltage must not exceed ±25V to prevent oxide breakdown. For thermal management, use a heatsink or adequate PCB copper area to keep the junction temperature below 150°C under maximum load.
STF3N80K5 - 800V 3A N-Channel Power MOSFET | STMicroelectronics
The STF3N80K5 is an N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH5™ series, designed for high-voltage switching applications. It features a breakdown voltage of 800V and a continuous drain current of 3A at 25°C, making it suitable for a wide range of power conversion circuits. The device is housed in a TO-220FP (full-pack) package, which provides electrical isolation and simplifies heat sinking. A power MOSFET is a type of field-effect transistor designed to handle significant power levels. It operates by controlling the flow of current between the drain and source terminals through an electric field generated at the gate. Power MOSFETs are essential components in power electronics, serving as switches in applications such as switch-mode power supplies (SMPS), power factor correction (PFC), and motor drives. They are preferred for their high switching speed, low on-resistance, and ease of parallel operation. Key features of the STF3N80K5 include a low on-resistance (RDS(on)) of 3.6 ohm (max) at VGS=10V, a gate charge (Qg) of 12 nC, and a fast body diode with low reverse recovery time. The device also offers a wide operating temperature range from -55°C to +150°C, ensuring reliability in harsh environments. The TO-220FP package provides excellent thermal performance with a thermal resistance of 3.5°C/W (junction-to-case), enabling efficient heat dissipation. The STF3N80K5 utilizes ST's SuperMESH5™ technology, which enhances the device's avalanche ruggedness and reduces switching losses. The device features a 100% avalanche tested design, ensuring robustness in applications where inductive loads may cause voltage spikes. The low gate charge and input capacitance (Ciss) of 300 pF allow for fast switching, reducing power dissipation during transitions. Typical applications include switch-mode power supplies, power factor correction circuits, LED lighting drivers, and auxiliary power supplies. The 800V rating makes it suitable for universal input (85-265VAC) offline power supplies, where the device must withstand high voltage transients. The low on-resistance minimizes conduction losses, improving overall efficiency. When designing with the STF3N80K5, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. The TO-220FP package is isolated, so no additional insulation is required for the heatsink. Consider adding a gate resistor to control switching speed and reduce EMI. Also, provide adequate snubber circuitry if the application involves inductive loads to prevent overvoltage stress.
STF6N52K3 - 6A, 525V N-Channel Power MOSFET | STMicroelectronics
The STF6N52K3 is an N-channel Power MOSFET from STMicroelectronics, designed for high-voltage switching applications. It features a drain-source voltage (VDS) of 525V, a continuous drain current (ID) of 6A at 25°C, and a low on-resistance (RDS(on)) of typically 1.2Ω at VGS=10V. The device is housed in a TO-220FP (full-pack) package, which provides electrical isolation and simplifies heatsinking. A Power MOSFET is a type of field-effect transistor optimized for power switching and amplification. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are widely used in switch-mode power supplies, motor drives, lighting, and other applications requiring efficient high-voltage switching. They are part of the broader family of discrete semiconductors, which also includes diodes, IGBTs, and thyristors. Key features of the STF6N52K3 include a very low gate charge (Qg) of 18nC, which enables fast switching and reduced driver losses. The device has a built-in avalanche capability, with an avalanche energy rating (EAS) of 150mJ, ensuring robustness in inductive load switching. The TO-220FP package offers a thermal resistance of 3.5°C/W (junction-to-case), allowing efficient heat dissipation. The operating junction temperature range is -55°C to +150°C, making it suitable for demanding environments. The STF6N52K3 is based on STMicroelectronics' MDmesh K3 technology, which combines a vertical structure with a deep trench gate to achieve low on-resistance and high breakdown voltage. This technology reduces conduction and switching losses, improving overall system efficiency. The device also features a fast intrinsic body diode, which is beneficial for applications requiring freewheeling current. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and high-voltage DC-DC converters. The high breakdown voltage and low on-resistance make it ideal for 380V DC bus systems and universal input (85-265V AC) power supplies. In these applications, the STF6N52K3 provides reliable switching performance and high efficiency. When designing with this device, ensure proper gate drive voltage (recommended VGS = 10V) to achieve the lowest on-resistance. The TO-220FP package requires a heatsink for high-power dissipation; calculate the thermal budget based on the application's power loss. Additionally, consider the gate-source voltage rating (VGS max = ±30V) and use appropriate gate protection if necessary.
STFU13N80K5 - 13A, 800V N-Channel Power MOSFET | STMicroelectronics
The STFU13N80K5 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh K5 super-junction technology family. It delivers a continuous drain current of 13A at 25°C and features a breakdown voltage of 800V, making it suitable for high-voltage power conversion applications. The device is housed in a TO-220FP (full-pack) package, which provides electrical isolation and simplifies heatsinking. A Power MOSFET is a type of field-effect transistor designed to handle significant power levels. It operates by controlling the flow of current through a semiconductor channel using an electric field, enabling efficient switching and amplification. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in power supplies, motor drives, and inverters. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STFU13N80K5 include a low on-resistance (RDS(on)) of 0.29 ohm (typical) at VGS=10V, which minimizes conduction losses. The device offers a wide gate-source voltage range of ±30V and a total gate charge (Qg) of 38 nC, enabling fast switching. It also features an intrinsic body diode with a reverse recovery time of 330 ns, which is important for inductive load switching. The TO-220FP package has a thermal resistance of 3.5°C/W (junction-to-case), allowing efficient heat dissipation. The MDmesh K5 technology utilizes a super-junction structure that reduces on-resistance while maintaining high breakdown voltage, achieving a good trade-off between conduction and switching losses. This makes the STFU13N80K5 ideal for applications requiring high efficiency and reliability, such as switch-mode power supplies (SMPS), power factor correction (PFC) circuits, and high-voltage DC-DC converters. Typical applications include server power supplies, industrial power systems, LED lighting drivers, and solar inverters. The device's high voltage rating and low on-resistance make it particularly suited for 380V DC bus systems and universal input (85-265V AC) power supplies. When designing with this MOSFET, ensure proper gate drive voltage (10V recommended) to achieve low on-resistance. The TO-220FP package requires a heatsink for high-power dissipation; consider the thermal impedance and airflow in your system. Also, implement appropriate snubber circuits or gate resistors to manage switching transients and EMI.
STH60N099DM9-2AG - 60V, 99mOhm N-Channel Power MOSFET | STMicroelectronics
The STH60N099DM9-2AG is an N-channel power MOSFET from STMicroelectronics, designed for high-efficiency power conversion and switching applications. It features a drain-source voltage (VDS) of 60V and a typical on-resistance (RDS(on)) of 99mOhm at 10V gate drive, making it suitable for a wide range of power management tasks. The device is housed in a PowerFLAT 5x6 package, which offers excellent thermal performance and a compact footprint for space-constrained designs. A power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in DC-DC converters, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. The STH60N099DM9-2AG leverages ST's advanced MDmesh technology to achieve low on-resistance and fast switching, reducing conduction and switching losses in high-frequency circuits. Key features of the STH60N099DM9-2AG include a 60V drain-source breakdown voltage, a continuous drain current of 60A at 25°C, and a low gate charge for efficient high-frequency operation. The device also offers a wide operating junction temperature range from -55°C to +175°C, ensuring reliability in harsh environments. The PowerFLAT 5x6 package provides a low thermal resistance of 1.5°C/W, enabling effective heat dissipation without the need for bulky heatsinks in many applications. Technically, the STH60N099DM9-2AG is built using ST's MDmesh technology, which optimizes the trade-off between on-resistance and switching performance. The device features a low gate charge (Qg) of 45nC, which reduces the drive requirements and improves efficiency in high-frequency switching converters. The body diode has a fast reverse recovery time, minimizing losses in bridge topologies. The device is fully RoHS compliant and halogen-free, meeting modern environmental standards. Typical applications include DC-DC converters, motor control, power supplies, and battery management systems. In a synchronous buck converter, the STH60N099DM9-2AG can be used as the high-side switch, where its low RDS(on) minimizes conduction losses, and its fast switching reduces transition losses. In motor control, the device's high current capability and ruggedness make it suitable for driving brushed and brushless DC motors. When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. The gate-source voltage should not exceed ±20V to prevent oxide breakdown. Adequate PCB copper area and thermal vias are recommended to keep the junction temperature within safe limits under high load conditions.
STI34N60DM2 - 34A, 600V N-Channel MDmesh DM2 Power MOSFET | STMicroelectronics
The STI34N60DM2 is an N-channel Power MOSFET manufactured by STMicroelectronics, featuring a 600V drain-source breakdown voltage and a continuous drain current of 34A at 25°C. It is housed in a TO-262 (I2PAK) package, designed for high-efficiency power conversion applications. This device utilizes ST's MDmesh DM2 technology, which provides low on-resistance and reduced switching losses, making it suitable for demanding power supply and motor control circuits. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in switch-mode power supplies (SMPS), DC-DC converters, motor drives, and lighting systems, where efficient high-voltage switching is required. They are part of the broader family of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, each serving distinct roles in power management. Key features of the STI34N60DM2 include a low typical on-resistance (RDS(on)) of 0.099 ohm at 10V gate drive, a high avalanche ruggedness, and a fast body diode. The device offers a wide operating junction temperature range from -55°C to +150°C, ensuring reliability in harsh environments. Its gate charge is optimized for efficient high-frequency operation, and it is RoHS compliant, meeting environmental standards. Technically, the MDmesh DM2 series employs a vertical structure with a deep trench gate, which reduces the on-resistance and gate charge compared to conventional planar MOSFETs. This results in lower conduction and switching losses, improving overall system efficiency. The device also features an intrinsic body diode with low reverse recovery charge, beneficial for bridge topologies. Typical applications include switch-mode power supplies for industrial and consumer electronics, DC-DC converters, motor control circuits, and power factor correction (PFC) stages. The high voltage rating and current capability make it suitable for 400V and 600V bus systems. When designing with this MOSFET, ensure proper gate drive voltage (typically 10V) to achieve minimum on-resistance. Consider thermal management by providing adequate PCB copper area or a heatsink, as power dissipation can be significant at high currents. Also, implement snubber circuits or use the device's avalanche capability to handle inductive spikes.