1EDN7146GXTMA1 vs 2EDN7524GXTMA1 Comparison
Detailed side-by-side comparison of 1EDN7146GXTMA1 by Infineon and 2EDN7524GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDN7146GXTMA1
1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon
1EDN7146GXTMA1 β ActiveInfineon
2EDN7524GXTMA1
2EDN7524GXTMA1 - 5A Dual Low-Side Gate Driver for MOSFET/GaN | Infineon
2EDN7524GXTMA1 β ActiveSpecification Comparison
| Parameter | 1EDN7146GXTMA1 | 2EDN7524GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $0.82 |
| Driver Type | High-side, single-channel | β |
| Number of Drivers | 1 | β |
| Logic Type | Non-Inverting | β |
| Input Type | TDI (Truly Differential Inductor) | β |
| Maximum Bootstrap Voltage (VB) | 200 V | β |
| Supply Voltage (VCC) | 4.5 V to 20 V | 4.5 V to 20 V [DATA_NEEDED: exact range] |
| Source/Sink Drive Current | 500 mA / 500 mA | β |
| Gate Drive Voltage | Up to 11 V (typ) | β |
| Propagation Delay (typ) | 40 ns | β |
| Rise/Fall Time (typ) | [DATA_NEEDED: rise/fall time] | β |
| UVLO (VCC) | Yes | β |
| UVLO (VB) | Yes | β |
| Bootstrap Diode | Integrated | β |
| Operating Temperature | -40 C to +125 C | -40 C to +125 C |
| Package | PG-VSON-10-4 | PG-WSON-8-1 (3 mm x 3 mm) with exposed thermal pad |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| Product Type | β | Low-side gate driver IC |
| Number of Channels | β | 2 (dual) |
| Drive Current (Source/Sink) | β | 5 A peak |
| Input Logic | β | Non-inverting, TTL / 3.3 V CMOS-compatible |
| Input Voltage Tolerance | β | -10 V to +20 V on logic pins |
| Propagation Delay | β | 20 ns typical [DATA_NEEDED: exact figure] |
| Channel-to-Channel Delay Matching | β | 1 ns |
| Rise Time | β | 5 ns typical [DATA_NEEDED: exact test condition] |
| Fall Time | β | 5 ns typical [DATA_NEEDED: exact test condition] |
| Output Stage | β | Rail-to-rail, separate source/sink |
| UVLO Protection | β | Yes |
| Target Devices | β | Standard MOSFETs, superjunction MOSFETs, GaN HEMTs |