BSC011N03LSIATMA1 vs BSC014N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC011N03LSIATMA1 by Infineon and BSC014N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC011N03LSIATMA1 - 30V N-Ch OptiMOS 1.1mΞ© Power MOSFET | Infineon
BSC011N03LSIATMA1 β Active
Specification Comparison
| Parameter | BSC011N03LSIATMA1 | BSC014N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.32 | $0.89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOSβ’ 30 V | OptiMOS 5 |
| Channel Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 30 V | β |
| Gate-to-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 37 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) at VGS=10V | 1.1 mΞ© (typical) | β |
| Power Dissipation at TA=25Β°C | 2.5 W | β |
| Power Dissipation at TC=25Β°C | 96 W | β |
| Operating Junction Temperature | -55 Β°C to +150 Β°C | β |
| Package | PG-TDSON-8-7 (Surface Mount) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant | Compliant |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 60 V |
| Gate-Source Voltage (VGS) Max | β | +/- 20 V |
| Continuous Drain Current (ID) at Ta | β | 30 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| On-Resistance RDS(on) Typ @ VGS=10V | β | 1.4 mOhm |
| On-Resistance RDS(on) Max @ VGS=10V | β | 1.45 mOhm |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 156 W |
| Operating Temperature Range | β | -55C to +150C |
| Technology | β | OptiMOS 5 (shielded-gate trench) |