BSC011N03LSIATMA1 vs BSC027N04LSGATMA1 Comparison

Detailed side-by-side comparison of BSC011N03LSIATMA1 by Infineon and BSC027N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC027N04LSGATMA1

BSC027N04LSGATMA1 - 40V 100A 2.7mΩ OptiMOS 3 N-MOSFET | Infineon

BSC027N04LSGATMA1 ✓ Active

Specification Comparison

Parameter BSC011N03LSIATMA1 BSC027N04LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.32 $0.54
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 30 V OptiMOS 3
Channel Type N-Channel
Drain-to-Source Voltage (VDS) 30 V
Gate-to-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TA=25°C 37 A
Continuous Drain Current (ID) at TC=25°C 100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value] [DATA_NEEDED: pulsed drain current]
On-State Resistance RDS(on) at VGS=10V 1.1 mΩ (typical)
Power Dissipation at TA=25°C 2.5 W
Power Dissipation at TC=25°C 96 W
Operating Junction Temperature -55 °C to +150 °C
Package PG-TDSON-8-7 (Surface Mount) PG-TDSON-8-1 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) 1
RoHS Status Compliant Compliant
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V
Gate-Source Voltage (VGS) max ±20 V
Continuous Drain Current (ID) at Ta=25°C 24 A
Continuous Drain Current (ID) at Tc=25°C 100 A
On-Resistance RDS(on) max @ VGS=10V 2.7 mΩ
Power Dissipation (Ta=25°C) 2.5 W
Power Dissipation (Tc=25°C) 83 W
Operating Temperature Range -55°C to +150°C
Technology OptiMOS 3 (Trench)
Halogen-Free Yes

Datasheets & Resources

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