BSC011N03LSIATMA1 vs IRLR8726TRPBF Comparison

Detailed side-by-side comparison of BSC011N03LSIATMA1 by Infineon and IRLR8726TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC011N03LSIATMA1 IRLR8726TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.32 $0.32
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 30 V
Channel Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 30 V
Gate-to-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TA=25°C 37 A
Continuous Drain Current (ID) at TC=25°C 100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value]
On-State Resistance RDS(on) at VGS=10V 1.1 mΩ (typical)
Power Dissipation at TA=25°C 2.5 W
Power Dissipation at TC=25°C 96 W
Operating Junction Temperature -55 °C to +150 °C -55C to +175C
Package PG-TDSON-8-7 (Surface Mount) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) 1
RoHS Status Compliant Compliant
Part Number IRLR8726TRPBF
Technology StrongIRFET™ (HEXFET)
Drain-Source Voltage (V_DS) 30 V
Continuous Drain Current (I_D) at T_C 86 A
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max 5.8 mΩ at V_GS = 10 V
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: V_GS(th) min/max]
Gate Charge Q_g (typ.) 15 nC
Power Dissipation P_D 75 W at T_C
Number of Pins 3 (Gate, Drain, Source)
Halogen-Free Yes

Datasheets & Resources

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