BSC014N04LSIATMA1 vs BSC022N04LS6ATMA1 Comparison

Detailed side-by-side comparison of BSC014N04LSIATMA1 by Infineon and BSC022N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014N04LSIATMA1

BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 βœ“ Active
Infineon
BSC022N04LS6ATMA1

BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon

BSC022N04LS6ATMA1 βœ“ Active

Specification Comparison

Parameter BSC014N04LSIATMA1 BSC022N04LS6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.39 $0.66
FET Type N-Channel β€”
Technology OptiMOS 5 (trench, thin-wafer) OptiMOSβ„’ 6 (N-channel trench)
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc) 100 A β€”
Continuous Drain Current (ID, Ta) 31 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] β€”
RDS(on) max at VGS=10 V 1.4 mOhm β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute maximum] β€”
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] β€”
Power Dissipation (PD, Tc) 96 W β€”
Power Dissipation (PD, Ta) 2.5 W β€”
Operating Temperature Range -55 C to +150 C β€”
Package PG-TDSON-8 FL (TDSON-8 with exposed drain pad) SuperSO8 5x6 (PG-TDSON-8-1)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) β€”
RoHS Status Compliant Compliant
Tradename OptiMOS β€”
Manufacturer β€” Infineon Technologies
Continuous Drain Current (ID) at Ta β€” 27 A
Continuous Drain Current (ID) at Tc β€” 100 A
Maximum Pulsed Drain Current (IDM) β€” 139 A
On-Resistance RDS(on) max β€” 2.2 mOhm at VGS=10 V
Power Dissipation (Ta) β€” 3 W
Power Dissipation (Tc) β€” 79 W
Channel Type β€” N-Channel
Pin Count β€” 8
Operating Temperature β€” -55 C to +175 C (junction)

Datasheets & Resources

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