BSC014N06NSATMA1 vs BSC021N08NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC014N06NSATMA1 by Infineon and BSC021N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC014N06NSATMA1 BSC014N06NSATMA1 - 60V 100A N-Ch OptiMOS 5 MOSFET | Infineon

BSC014N06NSATMA1 - 60V 100A N-Ch OptiMOS 5 MOSFET | Infineon

BSC014N06NSATMA1 βœ“ Active
Infineon
BSC021N08NS5ATMA1 BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 βœ“ Active

Specification Comparison

Parameter BSC014N06NSATMA1 BSC021N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.89 $0.81
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 60 V β€”
Gate-Source Voltage (VGS) Max +/- 20 V β€”
Continuous Drain Current (ID) at Ta 30 A β€”
Continuous Drain Current (ID) at Tc 100 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance RDS(on) Typ @ VGS=10V 1.4 mOhm β€”
On-Resistance RDS(on) Max @ VGS=10V 1.45 mOhm β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 156 W β€”
Operating Temperature Range -55C to +150C β€”
Package PG-TDSON-8-17 (SuperSO8 5x6 mm) SuperSO8 5x6 (PG-TSON-8-3)
Mounting Type Surface Mount Surface Mount
MSL Level 1 MSL 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant (Pb-free)
Technology OptiMOS 5 (shielded-gate trench) OptiMOS 5 (N-channel trench)
Part Number β€” BSC021N08NS5ATMA1
Drain-Source Voltage (V_DS max) β€” 80 V
Continuous Drain Current (I_D, Tc=25Β°C) β€” 226 A
Continuous Drain Current (I_D, Tc=100Β°C) β€” 100 A
Pulsed Drain Current (I_DM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max (V_GS=10 V) β€” 2.1 mΞ©
Gate-Source Voltage V_GS max β€” Β±20 V
Power Dissipation P_D (Tc=25Β°C) β€” 214 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Total Gate Charge Q_G typ β€” [DATA_NEEDED: total gate charge]
R_thJC thermal resistance max β€” [DATA_NEEDED: R_thJC]
Avalanche Energy Rated β€” Yes (single-pulse)
Delivery Form β€” Tape & Reel (T&R)

Datasheets & Resources

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