BSC022N04LS6ATMA1 vs BSC014N04LSIATMA1 Comparison

Detailed side-by-side comparison of BSC022N04LS6ATMA1 by Infineon and BSC014N04LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC022N04LS6ATMA1

BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon

BSC022N04LS6ATMA1 βœ“ Active
Infineon
BSC014N04LSIATMA1

BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon

BSC014N04LSIATMA1 βœ“ Active

Specification Comparison

Parameter BSC022N04LS6ATMA1 BSC014N04LSIATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $0.39
Manufacturer Infineon Technologies β€”
Technology OptiMOSβ„’ 6 (N-channel trench) OptiMOS 5 (trench, thin-wafer)
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Ta 27 A β€”
Continuous Drain Current (ID) at Tc 100 A β€”
Maximum Pulsed Drain Current (IDM) 139 A β€”
On-Resistance RDS(on) max 2.2 mOhm at VGS=10 V β€”
Power Dissipation (Ta) 3 W β€”
Power Dissipation (Tc) 79 W β€”
Package SuperSO8 5x6 (PG-TDSON-8-1) PG-TDSON-8 FL (TDSON-8 with exposed drain pad)
Mounting Type Surface Mount Surface Mount
Channel Type N-Channel β€”
Pin Count 8 β€”
Operating Temperature -55 C to +175 C (junction) β€”
RoHS Status Compliant Compliant
FET Type β€” N-Channel
Continuous Drain Current (ID, Tc) β€” 100 A
Continuous Drain Current (ID, Ta) β€” 31 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed IDM rating]
RDS(on) max at VGS=10 V β€” 1.4 mOhm
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS absolute maximum]
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD, Tc) β€” 96 W
Power Dissipation (PD, Ta) β€” 2.5 W
Operating Temperature Range β€” -55 C to +150 C
MSL Level β€” 1 (per JEDEC J-STD-020)
Tradename β€” OptiMOS

Datasheets & Resources

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