BSC027N04LSGATMA1 vs BSC021N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC027N04LSGATMA1 by Infineon and BSC021N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC027N04LSGATMA1 - 40V 100A 2.7mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC027N04LSGATMA1 β Active
Specification Comparison
| Parameter | BSC027N04LSGATMA1 | BSC021N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.54 | $0.81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at Ta=25Β°C | 24 A | β |
| Continuous Drain Current (ID) at Tc=25Β°C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max @ VGS=10V | 2.7 mΞ© | β |
| Power Dissipation (Ta=25Β°C) | 2.5 W | β |
| Power Dissipation (Tc=25Β°C) | 83 W | β |
| Operating Temperature Range | -55Β°C to +150Β°C | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | SuperSO8 5x6 (PG-TSON-8-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 3 (Trench) | OptiMOS 5 (N-channel trench) |
| MSL Level | 1 | MSL 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant (Pb-free) |
| Halogen-Free | Yes | β |
| Part Number | β | BSC021N08NS5ATMA1 |
| Drain-Source Voltage (V_DS max) | β | 80 V |
| Continuous Drain Current (I_D, Tc=25Β°C) | β | 226 A |
| Continuous Drain Current (I_D, Tc=100Β°C) | β | 100 A |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max (V_GS=10 V) | β | 2.1 mΞ© |
| Gate-Source Voltage V_GS max | β | Β±20 V |
| Power Dissipation P_D (Tc=25Β°C) | β | 214 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Total Gate Charge Q_G typ | β | [DATA_NEEDED: total gate charge] |
| R_thJC thermal resistance max | β | [DATA_NEEDED: R_thJC] |
| Avalanche Energy Rated | β | Yes (single-pulse) |
| Delivery Form | β | Tape & Reel (T&R) |