BSC027N04LSGATMA1 vs BSC150N03LDGATMA1 Comparison
Detailed side-by-side comparison of BSC027N04LSGATMA1 by Infineon and BSC150N03LDGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC027N04LSGATMA1
BSC027N04LSGATMA1 - 40V 100A 2.7mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC027N04LSGATMA1 β ActiveInfineon
BSC150N03LDGATMA1 - 30V 20A Dual N-Ch OptiMOS 3 MOSFET | Infineon
BSC150N03LDGATMA1 β ActiveSpecification Comparison
| Parameter | BSC027N04LSGATMA1 | BSC150N03LDGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.54 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at Ta=25Β°C | 24 A | β |
| Continuous Drain Current (ID) at Tc=25Β°C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max @ VGS=10V | 2.7 mΞ© | β |
| Power Dissipation (Ta=25Β°C) | 2.5 W | β |
| Power Dissipation (Tc=25Β°C) | 83 W | β |
| Operating Temperature Range | -55Β°C to +150Β°C | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-4 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 3 (Trench) | β |
| MSL Level | 1 | 1 |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | Yes |
| Series | β | OptiMOS 3 |
| Configuration | β | Dual N-Channel MOSFET Array (half-bridge) |
| Drain-Source Voltage (Vds) | β | 30 V |
| Continuous Drain Current (Id) @ TA=25C | β | 20 A |
| Continuous Drain Current (Id) @ TA=70C | β | [DATA_NEEDED: Id at TA=70C] |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: Idm] |
| Gate-Source Voltage (Vgs) | β | Β±20 V |
| Gate Threshold Voltage (Vgs(th)) | β | 1.0 V to 2.5 V |
| On-State Resistance (Rds(on)) @ Vgs=10V | β | [DATA_NEEDED: typical Rds(on) mOhm] |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | β | [DATA_NEEDED: typical Rds(on) mOhm] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: typical Qg nC] |
| Gate-Drain Charge (Qgd) | β | [DATA_NEEDED: typical Qgd nC] |
| Output Charge (Qoss) | β | [DATA_NEEDED: typical Qoss nC] |
| Power Dissipation (Pd) | β | 26 W |
| Operating Junction Temperature | β | -55C to +150C |