BSC027N04LSGATMA1 vs IAUC60N04S6L039ATMA1 Comparison
Detailed side-by-side comparison of BSC027N04LSGATMA1 by Infineon and IAUC60N04S6L039ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC027N04LSGATMA1
BSC027N04LSGATMA1 - 40V 100A 2.7mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC027N04LSGATMA1 β ActiveInfineon
IAUC60N04S6L039ATMA1
IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6L039ATMA1 β ActiveSpecification Comparison
| Parameter | BSC027N04LSGATMA1 | IAUC60N04S6L039ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.54 | $0.72 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 3 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at Ta=25Β°C | 24 A | β |
| Continuous Drain Current (ID) at Tc=25Β°C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max @ VGS=10V | 2.7 mΞ© | β |
| Power Dissipation (Ta=25Β°C) | 2.5 W | β |
| Power Dissipation (Tc=25Β°C) | 83 W | β |
| Operating Temperature Range | -55Β°C to +150Β°C | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8 (SSO8) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 3 (Trench) | OptiMOS 6 (trench) |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D, T_C=25C) | β | 60 A |
| Pulsed Drain Current (I_DM) | β | 240 A |
| R_DS(on) max @ V_GS=10V | β | 3.9 milliohm |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Q_G) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P_D) | β | 42 W |
| Operating Junction Temperature | β | -55C to +175C |
| Automotive Qualification | β | AEC-Q101 qualified |
| Avalanche Rated | β | Yes (100% avalanche tested) |