BSC027N04LSGATMA1 vs IPB017N10N5LFATMA1 Comparison
Detailed side-by-side comparison of BSC027N04LSGATMA1 by Infineon and IPB017N10N5LFATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC027N04LSGATMA1
BSC027N04LSGATMA1 - 40V 100A 2.7mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC027N04LSGATMA1 β ActiveInfineon
IPB017N10N5LFATMA1
IPB017N10N5LFATMA1 - 100V 1.7mΞ© OptiMOS 5 Linear FET | Infineon
IPB017N10N5LFATMA1 β ActiveSpecification Comparison
| Parameter | BSC027N04LSGATMA1 | IPB017N10N5LFATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.54 | $4.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | 100 V |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at Ta=25Β°C | 24 A | β |
| Continuous Drain Current (ID) at Tc=25Β°C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10V | 2.7 mΞ© | β |
| Power Dissipation (Ta=25Β°C) | 2.5 W | β |
| Power Dissipation (Tc=25Β°C) | 83 W | β |
| Operating Temperature Range | -55Β°C to +150Β°C | -55C to +175C (junction) |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 3 (Trench) | MOSFET (Metal Oxide Semiconductor) |
| MSL Level | 1 | 1 (unlimited) |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| Series | β | OptiMOS 5 Linear FET |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) @ TC=25C | β | 180 A |
| Continuous Drain Current (ID) @ TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| Maximum Power Dissipation (PD) @ TC=25C | β | 313 W |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | β | 1.7 mΞ© (max) |
| Gate-Source Voltage (VGS) Max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th)] |
| Package / Case | β | PG-TO263-7 (D2PAK-7), surface mount |
| Avalanche Rated | β | Yes |
| Linear-Mode (SOA) Optimized | β | Yes (OptiMOS Linear FET) |