BSC028N06NSTATMA1 vs BSZ0901NSIATMA1 Comparison
Detailed side-by-side comparison of BSC028N06NSTATMA1 by Infineon and BSZ0901NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC028N06NSTATMA1
BSC028N06NSTATMA1 - 60V 2.8mΞ© N-Ch OptiMOS 5 MOSFET | Infineon
BSC028N06NSTATMA1 β Active
Specification Comparison
| Parameter | BSC028N06NSTATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.40 | $0.34 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 25V |
| Part Number Base | BSC028N06NS | β |
| Technology | MOSFET N-Channel (OptiMOS 5) | OptiMOS trench N-channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 24 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | β |
| Gate Threshold Voltage VGS(th) typ | 2.5 V to 3.5 V | β |
| Total Gate Charge Qg | 37 nC @ VGS=10V | β |
| Input Capacitance Ciss | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] | β |
| Output Capacitance Coss | 825 pF | β |
| Reverse Transfer Capacitance Crss | 56 pF | β |
| Power Dissipation (TA) | 3 W | β |
| Power Dissipation (TC) | 100 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | PG-TDSON-8-7 (SuperSO8, 5x6 mm) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| MSL Level | 1 | β |
| AEC-Q101 Automotive Qualified | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] | β |
| Part Number | β | BSZ0901NSIATMA1 |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | β | 25 A |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| Power Dissipation (PD) at Ta=25C | β | 2.1 W |
| Power Dissipation (PD) at Tc=25C | β | 69 W |
| Pin Count | β | 8 |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge Qg] |
| Operating Temperature Range | β | -55 C to +150 C (typical MOSFET range) |
| Packaging | β | Tape & Reel (ATMA1 suffix = 13-inch reel) |