BSC030N08NS5ATMA1 vs BSC021N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC030N08NS5ATMA1 by Infineon and BSC021N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC030N08NS5ATMA1
BSC030N08NS5ATMA1 - 80V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC030N08NS5ATMA1 β Active
Specification Comparison
| Parameter | BSC030N08NS5ATMA1 | BSC021N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $0.81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Type | N-Channel Power MOSFET | β |
| Technology | OptiMOS 5 | OptiMOS 5 (N-channel trench) |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (ID,pulse) | 161 A | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| RDS(on) max at VGS=10 V | 3.0 mOhm | β |
| RDS(on) max at VGS=7 V | [DATA_NEEDED: RDS(on) at VGS=7V] | β |
| Power Dissipation (Ta=25C, 1.5mm FR4) | 2.5 W | β |
| Power Dissipation (TC=25C) | 139 W | β |
| Operating Temperature Range (TJ) | -55C to +150C | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | SuperSO8 5x6 (PG-TSON-8-3) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant (Pb-free) |
| Halogen-Free | Yes | β |
| Lead-Free | Yes | β |
| Gate Drive Logic | Standard 10V, compatible with 12V drive | β |
| Optimized Application | Synchronous Rectification | β |
| Part Number | β | BSC021N08NS5ATMA1 |
| Drain-Source Voltage (V_DS max) | β | 80 V |
| Continuous Drain Current (I_D, Tc=25Β°C) | β | 226 A |
| Continuous Drain Current (I_D, Tc=100Β°C) | β | 100 A |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance R_DS(on) max (V_GS=10 V) | β | 2.1 mΞ© |
| Gate-Source Voltage V_GS max | β | Β±20 V |
| Power Dissipation P_D (Tc=25Β°C) | β | 214 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Total Gate Charge Q_G typ | β | [DATA_NEEDED: total gate charge] |
| R_thJC thermal resistance max | β | [DATA_NEEDED: R_thJC] |
| Avalanche Energy Rated | β | Yes (single-pulse) |
| Delivery Form | β | Tape & Reel (T&R) |