BSC030N08NS5ATMA1 vs BSC027N04LSGATMA1 Comparison
Detailed side-by-side comparison of BSC030N08NS5ATMA1 by Infineon and BSC027N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC030N08NS5ATMA1
BSC030N08NS5ATMA1 - 80V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC030N08NS5ATMA1 β ActiveInfineon
BSC027N04LSGATMA1
BSC027N04LSGATMA1 - 40V 100A 2.7mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC027N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC030N08NS5ATMA1 | BSC027N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $0.54 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Type | N-Channel Power MOSFET | β |
| Technology | OptiMOS 5 | OptiMOS 3 (Trench) |
| Drain-Source Voltage (VDS) max | 80 V | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (ID,pulse) | 161 A | β |
| Gate-Source Voltage (VGS) max | +/-20 V | Β±20 V |
| RDS(on) max at VGS=10 V | 3.0 mOhm | β |
| RDS(on) max at VGS=7 V | [DATA_NEEDED: RDS(on) at VGS=7V] | β |
| Power Dissipation (Ta=25C, 1.5mm FR4) | 2.5 W | β |
| Power Dissipation (TC=25C) | 139 W | β |
| Operating Temperature Range (TJ) | -55C to +150C | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | Yes |
| Lead-Free | Yes | β |
| Gate Drive Logic | Standard 10V, compatible with 12V drive | β |
| Optimized Application | Synchronous Rectification | β |
| Product Family | β | OptiMOS 3 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 24 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | β | 2.7 mΞ© |
| Power Dissipation (Ta=25Β°C) | β | 2.5 W |
| Power Dissipation (Tc=25Β°C) | β | 83 W |
| Operating Temperature Range | β | -55Β°C to +150Β°C |