BSC039N06NSATMA1 vs BSC030N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC039N06NSATMA1 by Infineon and BSC030N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC039N06NSATMA1
BSC039N06NSATMA1 - 60V 3.9mΞ© 100A OptiMOS 5 N-MOSFET | Infineon
BSC039N06NSATMA1 β ActiveInfineon
BSC030N08NS5ATMA1
BSC030N08NS5ATMA1 - 80V 100A N-Ch OptiMOS 5 MOSFET | Infineon
BSC030N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC039N06NSATMA1 | BSC030N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at TA | 19 A | β |
| Continuous Drain Current (ID) at TC | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value at TC] | β |
| On-Resistance RDS(on) max at VGS=10V | 3.9 mOhm | β |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | β |
| Power Dissipation at TA (PD) | 2.5 W | β |
| Power Dissipation at TC (PD) | 69 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8-6 (TDSON EP, 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 8 | β |
| Gate Drive Voltage (VGS) | Β±20 V max | β |
| Technology | OptiMOS 5 (TrenchFET-style) | OptiMOS 5 |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Product Type | β | N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) max | β | 80 V |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Pulsed Drain Current (ID,pulse) | β | 161 A |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| RDS(on) max at VGS=10 V | β | 3.0 mOhm |
| RDS(on) max at VGS=7 V | β | [DATA_NEEDED: RDS(on) at VGS=7V] |
| Power Dissipation (Ta=25C, 1.5mm FR4) | β | 2.5 W |
| Power Dissipation (TC=25C) | β | 139 W |
| Operating Temperature Range (TJ) | β | -55C to +150C |
| Halogen-Free | β | Yes |
| Lead-Free | β | Yes |
| Gate Drive Logic | β | Standard 10V, compatible with 12V drive |
| Optimized Application | β | Synchronous Rectification |