BSC039N06NSATMA1 vs IAUZ30N06S5L140ATMA1 Comparison
Detailed side-by-side comparison of BSC039N06NSATMA1 by Infineon and IAUZ30N06S5L140ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC039N06NSATMA1 - 60V 3.9mΞ© 100A OptiMOS 5 N-MOSFET | Infineon
BSC039N06NSATMA1 β ActiveInfineon
IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon
IAUZ30N06S5L140ATMA1 β ActiveSpecification Comparison
| Parameter | BSC039N06NSATMA1 | IAUZ30N06S5L140ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.96 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at TA | 19 A | β |
| Continuous Drain Current (ID) at TC | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value at TC] | β |
| On-Resistance RDS(on) max at VGS=10V | 3.9 mOhm | β |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | β |
| Power Dissipation at TA (PD) | 2.5 W | β |
| Power Dissipation at TC (PD) | 69 W | β |
| Operating Junction Temperature | -55C to +150C | -55Β°C to +175Β°C |
| Package | PG-TDSON-8-6 (TDSON EP, 5x6 mm) | PG-TSDSON-8-32 (S3O8, 3x3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 8 | β |
| Gate Drive Voltage (VGS) | Β±20 V max | β |
| Technology | OptiMOS 5 (TrenchFET-style) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID, Tc) | β | 30 A (Tj) |
| Power Dissipation (PD, Tc) | β | 33 W |
| RDS(on) Max @ VGS=10 V | β | 14 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 2.2 V (typ) |
| Total Gate Charge (Qg) | β | 12.2 nC @ VGS=10 V |
| Output Capacitance (Coss) | β | 888 pF @ VDS=30 V |
| Technology Family | β | OptiMOS 5 |
| Automotive Grade | β | AEC-Q101 qualified |
| Gate-Source Voltage Max | β | Β±20 V |
| Lead-Free / RoHS | β | Yes (RoHS compliant) |