BSC039N06NSATMA1 vs IPB17N25S3100ATMA1 Comparison
Detailed side-by-side comparison of BSC039N06NSATMA1 by Infineon and IPB17N25S3100ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC039N06NSATMA1
BSC039N06NSATMA1 - 60V 3.9mΞ© 100A OptiMOS 5 N-MOSFET | Infineon
BSC039N06NSATMA1 β Active
Specification Comparison
| Parameter | BSC039N06NSATMA1 | IPB17N25S3100ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $1.84 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 250 V |
| Continuous Drain Current (ID) at TA | 19 A | β |
| Continuous Drain Current (ID) at TC | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed value at TC] | 64 A |
| On-Resistance RDS(on) max at VGS=10V | 3.9 mOhm | β |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | β |
| Power Dissipation at TA (PD) | 2.5 W | β |
| Power Dissipation at TC (PD) | 69 W | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8-6 (TDSON EP, 5x6 mm) | PG-TO263-3-2 (D2PAK-2) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 8 | β |
| Gate Drive Voltage (VGS) | Β±20 V max | β |
| Technology | OptiMOS 5 (TrenchFET-style) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | Compliant (Green Product) |
| Part Number | β | IPB17N25S3100ATMA1 |
| Continuous Drain Current (ID) at Tc | β | 17 A |
| Drain-Source On-Resistance (RDS(on)) | β | 100 mOhm max @ VGS = 10 V |
| Typical RDS(on) | β | 19.3 mOhm (manufacturer trench-technology figure, per datasheet collateral) |
| Gate-Source Voltage (VGS) | β | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | β | 4 V |
| Total Gate Charge (Qg) | β | 19 nC @ VGS = 10 V |
| Input Capacitance (Ciss) | β | 1.5 nF |
| Output Capacitance (Coss) | β | 23 pF |
| Reverse Transfer Capacitance (Crss) | β | 625 pF |
| Power Dissipation (PD) | β | 107 W at Tc = 25 C |
| Operating Temperature Range | β | -55 C to +175 C |
| MSL (Moisture Sensitivity Level) | β | MSL1 (up to 260 C peak reflow) |
| AEC-Q101 Qualification | β | Qualified (automotive grade) |
| Avalanche Rated | β | 100% avalanche tested |