IPB17N25S3100ATMA1 - 250V 17A N-Channel MOSFET | Infineon
MPN: IPB17N25S3100ATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.27 | $3.27 |
| 10 | $2.95 | $29.50 |
| 100 | $2.58 | $258.00 |
| 500 | $2.21 | $1,105.00 |
| 1,000 | $1.84 | $1,840.00 |
IPB17N25S3100ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used in power conversion and motor-drive applications. MOSFETs sit within the broader hierarchy of discrete semiconductors (transistors), and as an N-channel enhancement-mode part, IPB17N25S3100ATMA1 turns on when a positive gate-source voltage is applied. It belongs to Infineon's OptiMOS family, where low RDS(on) per silicon area reduces conduction losses in high-current switching topologies.
Key specifications include a drain-source voltage (VDS) of 250 V, gate-source voltage (VGS) of +/-20 V, total gate charge (Qg) of 19 nC at VGS = 10 V, input capacitance (Ciss) of 1.5 nF, and output capacitance (Coss) of 23 pF. The threshold voltage (VGS(th)) is 4 V, with avalanche-rated ruggedness (100% avalanche tested) and a maximum power dissipation of 107 W at Tc = 25 C.
The device uses Infineon's trench-technology cell structure to achieve the 19.3 mOhm typical RDS(on) figure cited in manufacturer collateral, balancing low conduction loss with manageable switching loss for hard-switched converters. The D2PAK package offers a low thermal resistance path suitable for tab-screw mounting or large PCB copper areas.
Typical applications include automotive DC-DC converters, 48 V mild-hybrid systems, motor-drive inverter stages, solenoid drivers, and industrial switched-mode power supplies. The 250 V rating also suits telecom brick converters and photovoltaic micro-inverter front-ends.
When designing with this part, choose gate-drive voltage of 10 V for full enhancement and minimize loop inductance between drain and source to control switching transients. The tab is electrically connected to the drain; mounting isolation must be considered for heatsink-attached designs.
This page synthesizes distributor pricing, drop-in alternatives, and practical thermal and PCB layout notes not found in the manufacturer datasheet alone, giving engineers a one-stop reference for selection and sourcing.
Drop-in alternatives for IPB17N25S3100ATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPB17N25S3100ATMA1 (same form factor and footprint) β differing in Package, Drain-Source Voltage (VDS), RoHS Status, Transistor Type, Gate Threshold Voltage (VGS(th)).
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPI17N25S3-100
β Drop-Inπ Reference alternative (not in catalog)
IPP17N25S3-100
β Drop-Inπ Reference alternative (not in catalog)
IAUZ30N06S5L140ATMA1
β Drop-Inβ In Stock
$0.96 / Unit
View Datasheet βBSC027N04LSGATMA1
β Drop-Inβ In Stock
$0.54 / Unit
View Datasheet βBSC039N06NSATMA1
β Drop-Inβ In Stock
$0.46 / Unit
View Datasheet βIPB17N25S3100ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPB17N25S3100ATMA1 |
| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | 250 V |
| Continuous Drain Current (ID) at Tc | 17 A |
| Pulsed Drain Current (IDM) | 64 A |
| Drain-Source On-Resistance (RDS(on)) | 100 mOhm max @ VGS = 10 V |
| Typical RDS(on) | 19.3 mOhm (manufacturer trench-technology figure, per datasheet collateral) |
| Gate-Source Voltage (VGS) | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | 4 V |
| Total Gate Charge (Qg) | 19 nC @ VGS = 10 V |
| Input Capacitance (Ciss) | 1.5 nF |
| Output Capacitance (Coss) | 23 pF |
| Reverse Transfer Capacitance (Crss) | 625 pF |
| Power Dissipation (PD) | 107 W at Tc = 25 C |
| Operating Temperature Range | -55 C to +175 C |
| Package | PG-TO263-3-2 (D2PAK-2) |
| Mounting Type | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) |
| AEC-Q101 Qualification | Qualified (automotive grade) |
| Avalanche Rated | 100% avalanche tested |
| RoHS Status | Compliant (Green Product) |
IPB17N25S3100ATMA1 Pin Configuration
| Pin 1 | Gate β Gate control input; drive to 10 V for full enhancement |
| Pin 2 | Drain β Drain terminal (also connected to the metal tab on the package bottom) |
| Pin 3 | Source β Source terminal and Kelvin return for gate-drive reference |
Safe Operating Area - DC Continuous
Typical Applications
IPB17N25S3100ATMA1 is suitable for 6 applications: 48V Mild-Hybrid DC-DC Converter, Automotive Motor-Drive Inverter, Industrial Switched-Mode Power Supply, Solar Micro-Inverter Front-End, Solenoid and Relay Driver, Uninterruptible Power Supply (UPS) PFC Stage.
48V Mild-Hybrid DC-DC Converter
The IPB17N25S3100ATMA1's 250 V VDS rating comfortably exceeds the 48 V mild-hybrid bus voltage, leaving >4x derating margin for switching transients and inductive ringing. In a buck or boost converter switching at 100-250 kHz, the 19 nC gate charge keeps gate-driver loss manageable (~3.8 mW at 100 kHz), while the 100 mOhm max RDS(on) at 10 V drive yields ~1.7 W conduction loss at 13 A continuous - acceptable for the synchronous-rectifier or main switch position. AEC-Q101 qualification makes it directly usable in 48 V DCDC converters that feed the 12 V rail in mild-hybrid vehicles. Use a 10 V gate drive and minimize source-loop inductance to control turn-off transients.
Recommended
Automotive Motor-Drive Inverter
In a 3-phase bridge driving a BLDC motor at 48-100 V bus, the IPB17N25S3100ATMA1 handles phase switching with its 250 V VDS and 17 A continuous rating - sufficient for pumps, fans, and small traction motors up to ~1 kW. The 64 A pulsed rating accommodates motor inrush and inductive kickback during commutation. The 100% avalanche rating and 175 C junction temperature capability provide margin for the harsh thermal environment of under-hood automotive motor-drive modules. Use isolated gate drivers and TVS clamping on the gate for robust operation.
Recommended
Industrial Switched-Mode Power Supply
For telecom-style AC-DC converters operating from rectified 170 V or 200 V rails, the IPB17N25S3100ATMA1's 250 V VDS rating provides 50 V of derating margin above peak rectified mains. The 107 W power dissipation rating and D2PAK thermal envelope support full-load operation without additional heatsinking beyond PCB copper. The trench technology's low RDS(on) of 19.3 mOhm typical improves efficiency by 1-2% over older planar MOSFETs in PFC and main-converter stages, reducing thermal stress on adjacent magnetics.
Recommended
Solar Micro-Inverter Front-End
In photovoltaic micro-inverter or DC-optimizer designs operating from 40-150 V PV string inputs, the IPB17N25S3100ATMA1 serves as the high-side or low-side switch in a full-bridge or push-pull topology. The 250 V rating handles open-circuit PV string voltage at cold temperatures (temperature coefficient increases Voc at -25 C), and the 17 A rating supports micro-inverter outputs up to ~500 W. The AEC-Q101 grade offers reliability headroom over commercial-grade alternatives for solar installations with 25-year service-life requirements.
Recommended
Solenoid and Relay Driver
The IPB17N25S3100ATMA1's 64 A pulsed drain current rating makes it well-suited for driving inductive loads such as solenoids, fuel injectors, and high-current relays in automotive and industrial systems. The 250 V VDS absorbs flyback voltage when the inductive load is switched off, eliminating the need for external freewheeling diodes in many configurations. The fast switching and 19 nC Qg enable sub-microsecond turn-off times, critical for high-speed fuel-injector or piezo-injector drive waveforms.
Recommended
Uninterruptible Power Supply (UPS) PFC Stage
In the boost-PFC stage of a 1-3 kVA UPS, the IPB17N25S3100ATMA1 operates as the boost switch handling rectified mains at 200-380 V peak. The 250 V VDS is suitable for 230 V AC universal-input designs with adequate margin. The 17 A continuous current rating supports >1 kW PFC stages, and the 107 W dissipation rating handles continuous-mode conduction losses. AEC-Q101 qualification offers reliability margin for the 24/7 continuous-operation duty cycle of UPS installations.
Recommended
Recommended Products Summary
Engineering reference data for IPB17N25S3100ATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPI17N25S3-100 | IPP17N25S3-100 | IAUZ30N06S5L140ATMA1 | BSC027N04LSGATMA1 | BSC039N06NSATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TO263-3-2 (D2PAK-2) | PG-TO262-3-2 (I2PAK) | PG-TO220-3-2 (TO-220-2) | PG-TO263-3-2 (D2PAK) - same | PG-TDSON-8 (SuperSO8) | PG-TDSON-8 (SuperSO8) |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| Drain-Source Voltage (VDS) | 250 V | 250 V - same | 250 V - same | 60 V (-76%) | 40 V (-84%) | 60 V (-76%) |
| Continuous Drain Current (ID) | 17 A | 17 A - same | 17 A - same | 30 A (+76%) | 25 A (+47%) | 19 A (+12%) |
| RDS(on) max @ 10 V | 100 mOhm | 100 mOhm - same | 100 mOhm - same | 1.4 mOhm (lower - voltage class difference) | 2.7 mOhm (lower) | 3.9 mOhm (lower) |
| Operating Temperature | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +150 C | -55 C to +150 C |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Same-die through-hole variant available for chassis-mount designs (vs IPI17N25S3-100)
- 250 V voltage class exceeds typical 60 V synchronous FETs in the same D2PAK footprint (vs IAUZ30N06S5L140ATMA1)
- AEC-Q101 automotive qualified with 175 C junction temperature (vs BSC039N06NSATMA1)
Design Notes
Estimated: at continuous 17 A with RDS(on) = 100 mOhm at 100 C junction, conduction loss is approximately 28.9 W. The D2PAK package's theta_JC is typically ~1 C/W, giving a junction-to-case temperature rise of ~29 C above case temperature. Adequate PCB copper area (at least 2 square inches of 2 oz copper) or an external heatsink is required to keep the case below 100 C in continuous operation. For pulsed operation, the 64 A IDM rating permits transient loads up to several milliseconds per the SOA curve.
Minimize the source-loop inductance by placing the gate-driver return directly at the source pin rather than at a distant ground point. Keep the drain-to-source switching loop compact - the high di/dt of MOSFET switching induces voltage spikes proportional to loop inductance. Use a 10 V gate-drive supply with peak source/sink current of at least 1 A to switch the 19 nC gate charge in <20 ns. Add a TVS or RC snubber across drain-source if the application has high parasitic inductance.
The metal tab of the D2PAK package is electrically connected to the drain pin. If mounting to a heatsink, use a thermally-conductive but electrically-insulating pad (e.g., silicone rubber with fiberglass reinforcement) to avoid shorting the drain to chassis ground. Exceeding the +/-20 V VGS rating can permanently damage the gate oxide - ensure gate-drive transients are clamped. The body diode is rated for limited forward current; for high-current freewheeling, consider an external Schottky diode in parallel.
Compliance Information
AEC-Q101 qualified per Infineon datasheet (automotive-grade MOSFET equivalent). RoHS compliant and lead-free per product page. MSL1 rated for reflow up to 260 C.
