BSC040N08NS5ATMA1 vs BSZ110N08NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC040N08NS5ATMA1 by Infineon and BSZ110N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC040N08NS5ATMA1 - 80V 100A 4mOhm OptiMOS 5 MOSFET | Infineon
BSC040N08NS5ATMA1 β ActiveInfineon
BSZ110N08NS5ATMA1
BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon
BSZ110N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC040N08NS5ATMA1 | BSZ110N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.15 | $0.44 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC040N08NS5ATMA1 | β |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID, Tc=25C) | 100 A | β |
| Maximum Drain Current (ID, Tc=25C, package-limited) | 121 A | β |
| On-Resistance (RDS(on) max, VGS=10V) | 4 mOhm | β |
| Power Dissipation (Ta=25C, 1inΒ² PCB) | 2.5 W | β |
| Power Dissipation (Tc=25C) | 104 W | β |
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55 C to +175 C | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| Primary Application | Synchronous rectification in telecom and server power supplies | β |
| Part Family | β | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at Tc | β | 40 A |
| On-Resistance RDS(on) max | β | 11 mΞ© |
| Power Dissipation (PD) at Tc | β | 50 W |
| Polarity | β | N-Channel |
| Configuration | β | Single MOSFET |
| Gate Drive Voltage (VGS) | β | [DATA_NEEDED: VGS rating] |
| Operating Temperature Range | β | [DATA_NEEDED: operating temperature range] |