BSC047N08NS3GATMA1 vs BSC022N04LS6ATMA1 Comparison

Detailed side-by-side comparison of BSC047N08NS3GATMA1 by Infineon and BSC022N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC047N08NS3GATMA1 BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 βœ“ Active
Infineon
BSC022N04LS6ATMA1

BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon

BSC022N04LS6ATMA1 βœ“ Active

Specification Comparison

Parameter BSC047N08NS3GATMA1 BSC022N04LS6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $0.66
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC047N08NS3GATMA1 β€”
Technology OptiMOSβ„’ 3 (N-channel trench) OptiMOSβ„’ 6 (N-channel trench)
Drain-Source Voltage (VDS) max 80 V β€”
Continuous Drain Current (ID) at Tc 100 A 100 A
Continuous Drain Current (ID) at Ta 18 A 27 A
On-Resistance RDS(on) max 4.7 mOhm at VGS=10 V 2.2 mOhm at VGS=10 V
Power Dissition (Tc) 125 W β€”
Power Dissipation (Ta) 2.5 W 3 W
Gate Threshold Voltage (VGS th) Normal level (typ 1.7 V) β€”
Avalanche Rated 100% tested β€”
Package PG-TDSON-8-1 (SuperSO8 5x6) SuperSO8 5x6 (PG-TDSON-8-1)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +175 Β°C (Tj) β€”
RoHS / Halogen-Free RoHS compliant, Halogen-free β€”
Drain-Source Voltage (VDS) β€” 40 V
Maximum Pulsed Drain Current (IDM) β€” 139 A
Power Dissipation (Tc) β€” 79 W
Channel Type β€” N-Channel
Pin Count β€” 8
Operating Temperature β€” -55 C to +175 C (junction)
RoHS Status β€” Compliant

Datasheets & Resources

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