BSS214NWH6327XTSA1 vs BSL606SNH6327XTSA1 Comparison
Detailed side-by-side comparison of BSS214NWH6327XTSA1 by Infineon and BSL606SNH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon
BSL606SNH6327XTSA1 β ActiveSpecification Comparison
| Parameter | BSS214NWH6327XTSA1 | BSL606SNH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.15 | $0.19 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSS214NWH6327XTSA1 | β |
| Series | OptiMOS | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | OptiMOS3 trench MOSFET |
| Drain-to-Source Voltage (Vdss) | 20 V | β |
| Continuous Drain Current (Id) @ 25C | 1.5 A | β |
| Rds(on) Max @ Vgs=4.5V | 250 mOhm | β |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5 V, 4.5 V | β |
| Power Dissipation (Pd) @ Ta=25C | 500 mW | β |
| Package | PG-SOT323 (SOT-323-3) | PG-TSOP6-6 (6-pin, SOT-23-6 compatible) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (junction) | β |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (Automotive) |
| RoHS Status | Compliant | Compliant (Pb-free plating) |
| Lead-Free | Yes | β |
| Transistor Type | β | N-Channel MOSFET (Enhancement Mode) |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Ta | β | 4.5 A |
| Static Drain-Source On-Resistance (RDS(on)) | β | 60 mOhm (max, VGS = 10 V) |
| Total Power Dissipation (PD) at Ta | β | 2 W |
| Gate-Source Voltage (VGS) | β | +/-20 V (max) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min] |
| Total Gate Charge (Qg) | β | 5.6 nC (max) |
| Operating Temperature Range | β | -55C to +150C (Tj) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |