BSZ0901NSIATMA1 vs BSZ0904NSIATMA1 Comparison
Detailed side-by-side comparison of BSZ0901NSIATMA1 by Infineon and BSZ0904NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSZ0901NSIATMA1 | BSZ0904NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.34 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSZ0901NSIATMA1 | β |
| Series | OptiMOS 25V | β |
| Technology | OptiMOS trench N-channel MOSFET | OptiMOS (N-channel power MOSFET) |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta=25C | 25 A | 18 A |
| Continuous Drain Current (ID) at Tc=25C | 40 A | 40 A |
| Power Dissipation (PD) at Ta=25C | 2.1 W | β |
| Power Dissipation (PD) at Tc=25C | 69 W | β |
| Package | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TSDSON-8-FL (PQFN 3.3x3.3) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th)] |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | β |
| Operating Temperature Range | -55 C to +150 C (typical MOSFET range) | -55C to +150C |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | β |
| RoHS Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) max | β | 30 V |
| On-State Resistance RDS(on) max at VGS=4.5V | β | 4 mOhm |
| On-State Resistance RDS(on) max at VGS=10V | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Power Dissipation at Ta | β | 2.1 W |
| Power Dissipation at Tc | β | 37 W |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Integrated Schottky-like Diode | β | Yes (monolithic) |
| Avalanche Rated | β | 100% avalanche tested |
| Qualification | β | JEDEC qualified for target applications |
| Lead Plating | β | Pb-free |
| Halogen-Free | β | Yes |