EP2A40B724C8ES vs EP2A40B724C7 Comparison
Detailed side-by-side comparison of EP2A40B724C8ES by Intel and EP2A40B724C7 by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | EP2A40B724C8ES | EP2A40B724C7 |
|---|---|---|
| Brand | Intel | Intel |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Obsolete | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $162.00 | $650.00 |
| Series | APEX II (EP2A) | β |
| Family | Field Programmable Gate Array (FPGA) | APEX II |
| Logic Elements / Cells | 38,400 | 38,400 |
| Number of Gates (typical) | 655,360 | β |
| Number of I/O | 540 | β |
| Package | 724-BBGA / FCBGA | 724-ball FCBGA (FineLine BGA), 35 mm x 35 mm |
| Speed Grade | -8 (C8) | β |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0 Β°C to +85 Β°C (commercial) |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| MSL Level | [DATA_NEEDED: MSL moisture sensitivity level] | [DATA_NEEDED: MSL level] |
| RoHS Status | [DATA_NEEDED: RoHS status] | Non-compliant (lead-bearing FCBGA) |
| Supply Voltage | [DATA_NEEDED: VCCINT / VCCIO core and I/O voltages] | β |
| Process Node | [DATA_NEEDED: CMOS process technology] | β |
| Embedded Memory | Embedded System Blocks (ESB) | β |
| Programmable Logic Type | SRAM-based, in-system reconfigurable | β |
| Lead-Free Status | [DATA_NEEDED: lead-free status] | β |
| Architecture | MultiCore interconnect with LABs and ESBs | β |
| Total System Gates | β | 1,500,000 |
| Embedded RAM Bits | β | 655,360 |
| Maximum User I/O | β | 540 |
| Core Supply Voltage | β | 1.425 V to 1.575 V (typ. 1.5 V) |
| Process Technology | β | 0.15 Β΅m CMOS, up to 8 metal layers, all-layer copper |
| Maximum Internal Frequency | β | 562 MHz |
| PLLs | β | 4 |
| I/O Standards Supported | β | LVTTL, LVCMOS, 1.5 V/1.8 V/2.5 V/3.3 V, SSTL, HSTL, PCI, LVDS, LVPECL, PCML, HyperTransport, True-LVDS (1 Gbps) |
| Configuration Method | β | JTAG (IEEE 1149.1), Passive Serial, Passive Parallel, Active Serial via EPC configuration devices |
| MultiVolt I/O Support | β | 1.5 V, 1.8 V, 2.5 V, 3.3 V |
| DDR Memory Support | β | Yes (via ESB / I/O circuitry) |