EP4CE15F1717N vs EP4CE10E22C8N Comparison
Detailed side-by-side comparison of EP4CE15F1717N by Intel and EP4CE10E22C8N by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | EP4CE15F1717N | EP4CE10E22C8N |
|---|---|---|
| Brand | Intel | Intel |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $35.20 | $11.10 |
| Series | Cyclone IV E | Cyclone IV E |
| Logic Elements (LE) | 15,408 | 10,320 |
| Embedded Memory | 516,096 bits (56 M9K blocks) | β |
| Embedded 18x18 Multipliers | 56 | β |
| Maximum User I/Os | 165 | β |
| PLLs | 4 | β |
| Global Clock Networks | 20 | β |
| Process Technology | 60 nm low-power | 60 nm low-power |
| Core Voltage (VCCINT) | 1.0 V / 1.2 V | β |
| I/O Voltage (VCCIO) | 1.2 V / 1.8 V / 2.5 V / 3.0 V / 3.3 V | β |
| Operating Temperature | 0C to +85C (commercial "N" suffix) | 0C to +85C |
| Package | 256-ball F-BGA (FBGA-256) | 144-LQFP Exposed Pad (E22) |
| Package Pitch | 1.0 mm | β |
| LVDS Performance | Up to 343 Mbps | β |
| Speed Grade | 7 | 8 |
| Configuration Mode | External serial/parallel flash (volatile SRAM) | JTAG / AS / AP / PS |
| RoHS Status | Compliant | Compliant |
| MSL Level | 3 (168 hours) | β |
| Family | β | EP4CE10 |
| Embedded Memory (M9K blocks) | β | 46 |
| Embedded Memory (total) | β | 414 Kbit |
| Maximum User I/O | β | 91 |
| Number of Pins | β | 144 |
| Temperature Grade | β | Commercial (C) |
| PLL Count | β | 2 |
| Supply Voltage (Core) | β | 1.0 V to 1.2 V |
| Mounting Type | β | Surface Mount |
| Lead-Free | β | Yes |