EP4CGX150DF31I7NAD vs EP4CGX150DF31I7 Comparison
Detailed side-by-side comparison of EP4CGX150DF31I7NAD by Altera and EP4CGX150DF31I7 by Altera. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Altera
EP4CGX150DF31I7NAD - Cyclone IV GX FPGA 149K LEs | Altera | 896-BGA
EP4CGX150DF31I7NAD β ActiveSpecification Comparison
| Parameter | EP4CGX150DF31I7NAD | EP4CGX150DF31I7 |
|---|---|---|
| Brand | Altera | Altera |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $372.40 | $242.55 |
| Family | Cyclone IV GX | β |
| Logic Elements | 149,760 | β |
| Logic Array Blocks (LABs) | 9,360 CLBs | 9,360 |
| Embedded Memory Bits | 6,635,520 bits | β |
| Embedded Memory Blocks (M9K) | 720 | β |
| Embedded 18x18 Multipliers | 720 | β |
| Transceiver Channels | 8 (up to 3.125 Gbps) | 8 (up to 3.125 Gbps) |
| PCI Express Hard IP Blocks | 2 | β |
| Maximum User I/O Pins | 475 | β |
| Package | 896-ball FineLine BGA (FBGA-896), 31 mm, 1.0 mm pitch | 896-ball FBGA (F31) |
| Speed Grade | 7 (industrial, -40C to +100C junction) | β |
| Operating Junction Temperature | -40C to +100C | β |
| Core Voltage VCCINT | 1.0 V or 1.2 V (transceiver-dependent) | β |
| PLL Analog Voltage VCCA | 2.5 V | β |
| I/O Bank Voltage VCCIO | 1.2 V to 3.3 V (banked) | β |
| Configuration Modes | AS, PS, FPP, JTAG | β |
| Bitstream Encryption | AES-256 | β |
| RoHS Status | Compliant (Pb-free) | Compliant |
| Ordering Code Suffix | AD (Pb-free tray) | β |
| Series | β | Cyclone IV GX |
| Device Family | β | Cyclone IV GX (EP4CGX150) |
| Logic Elements (LE) | β | 149,760 |
| Embedded Memory (Total) | β | 6,635,520 bits (6,480 Kbits) |
| Embedded Multiplier Blocks (18x18) | β | [DATA_NEEDED: 18x18 multiplier count] |
| User I/O Pins | β | 475 |
| PLLs | β | 6 |
| Global Clock Networks | β | 20 |
| Maximum Core Frequency | β | 472.5 MHz |
| Core Supply Voltage | β | 1.2 V |
| Process Technology | β | 60 nm low-power CMOS |
| Mounting Type | β | Surface Mount |
| Operating Temperature | β | -40C to +100C (Industrial) |
| Configuration Mode | β | AS, PS, JTAP, FPP |