EP4S40G2F40I2NAA vs EP4S100G2F40I3G Comparison
Detailed side-by-side comparison of EP4S40G2F40I2NAA by Intel and EP4S100G2F40I3G by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | EP4S40G2F40I2NAA | EP4S100G2F40I3G |
|---|---|---|
| Brand | Intel | Intel |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Nrnd | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2,710.00 | $5,680.00 |
| Product Family | Stratix IV GT | β |
| Logic Elements (LE) | 228,000 | β |
| Embedded Memory Bits | 17,544,192 | β |
| Maximum User I/O | 654 | β |
| Process Technology | 40 nm | 40 nm |
| Maximum Transceiver Data Rate | 11.3 Gbps | β |
| Package | 1517-ball FCBGA | 1517-BBGA, FCBGA (40x40 mm) |
| Speed Grade | I2 | β |
| Operating Temperature | Industrial (-40C to +100C) [DATA_NEEDED: precise junction range] | β |
| RoHS Status | Compliant (per 'N' suffix) | Compliant |
| Configuration Memory | SRAM-based, volatile | β |
| DSP Blocks | [DATA_NEEDED: exact count from datasheet] | [DATA_NEEDED: DSP block count] |
| PLL Count | [DATA_NEEDED: exact PLL count] | β |
| Hard Memory Controllers | DDR3 / DDR2 / QDR II+ controllers embedded | β |
| Hard PCIe Blocks | PCI Express hard IP embedded | β |
| Transceiver Channels | [DATA_NEEDED: GT channel count] | β |
| Mounting Type | Surface Mount (BGA) | Surface Mount (BGA) |
| Lead-Free / Halogen-Free | Lead-free (N suffix); halogen-free status [DATA_NEEDED] | β |
| Series | β | Stratix IV GT |
| Family | β | Stratix IV |
| Logic Elements | β | 228,000 |
| Logic Array Blocks (LABs) | β | 91,200 |
| Total RAM Bits | β | 17,544,192 |
| Operating Voltage (Core) | β | 0.86 V to 1.15 V |
| Operating Temperature Range | β | -40 Β°C to 100 Β°C Tj (industrial) |
| Number of I/O | β | [DATA_NEEDED: pin/ball count - exact user I/O count] |
| Transceivers | β | [DATA_NEEDED: number of high-speed transceivers] |
| User Flash Memory | β | [DATA_NEEDED: configuration flash size] |
| Configuration Scheme | β | SRAM-based, configuration via JTAG/AS/PS/Fast passive parallel |
| Moisture Sensitivity Level (MSL) | β | 3 (per JEDEC J-STD-020) |
| Lead-Free | β | Yes |