EPF10K100EFC484-1 vs EPF10K100EFC484-3N Comparison
Detailed side-by-side comparison of EPF10K100EFC484-1 by Intel and EPF10K100EFC484-3N by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Intel
EPF10K100EFC484-3N
EPF10K100EFC484-3N - 100K Gates FLEX 10KE FPGA | Intel / Altera
EPF10K100EFC484-3N ObsoleteSpecification Comparison
| Parameter | EPF10K100EFC484-1 | EPF10K100EFC484-3N |
|---|---|---|
| Brand | Intel | Intel |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Active | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $142.00 | $142.00 |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements / Cells | 4,992 | 4992 |
| Number of LABs/CLBs | 624 | β |
| Total RAM Bits | 49,152 | β |
| Embedded Memory (Kbits) | 48 (12 EABs) | β |
| Number of Block RAM (EABs) | 12 | β |
| User I/Os | 338 | 338 |
| Total Gates | 257,000 typical system gates | 100,000 |
| Operating Supply Voltage (Core) | 2.5 V | β |
| Operating Supply Voltage Range | 2.375 V to 2.625 V | β |
| Process Technology | 0.42 Β΅m CMOS | 0.22 Β΅m CMOS |
| Propagation Delay | 0.6 ns | β |
| Operating Temperature | 0 Β°C to 70 Β°C (commercial) | β |
| Package | 484-FBGA (FineLine BGA, 23Γ23 mm) | 484-ball FineLine BGA (FC484 / FBGA-484) |
| Mounting Type | Surface Mount (SMT) | Surface Mount (BGA) |
| Program Memory Type | SRAM (volatile) | β |
| Configuration Interface | JTAG (IEEE 1149.1), serial/parallel EPROM | β |
| PCI Support | 3.3 V PCI compliant | β |
| RoHS Status | Non-compliant (per Arrow listing) | β |
| Lifecycle Status | Obsolete (EOL) | β |
| Embedded Memory (EAB) | β | 49,152 bits (12 EABs) |
| Logic Array Blocks (LABs) | β | 624 |
| Core Voltage (VCCINT) | β | 2.5 V |
| I/O Voltage (VCCIO) | β | MultiVolt (2.5 V / 3.3 V / 5.0 V tolerant per bank) |
| Internal Performance | β | 200 MHz |
| Speed Grade | β | -3 (fastest commercial bin) |
| Temperature Grade | β | Commercial (0 Β°C to +70 Β°C) |
| Configuration Method | β | SRAM (external EPROM/Flash/JTAG required at power-up) |
| Lead-Free / RoHS | β | Yes (N suffix = lead-free) |