EPF6010ANTC100-2 vs EPF6010ATC100-3N Comparison
Detailed side-by-side comparison of EPF6010ANTC100-2 by Intel and EPF6010ATC100-3N by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Intel
EPF6010ANTC100-2
EPF6010ANTC100-2 - FLEX 6000 FPGA, 880 LEs, 71 I/O, 100-TQFP | Intel
EPF6010ANTC100-2 β Last Time BuyIntel
EPF6010ATC100-3N
EPF6010ATC100-3N - FLEX 6000 FPGA, 880 Cells, 100-TQFP | Intel
EPF6010ATC100-3N β Last Time BuySpecification Comparison
| Parameter | EPF6010ANTC100-2 | EPF6010ATC100-3N |
|---|---|---|
| Brand | Intel | Intel |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Last_time_buy | Last_time_buy |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $17.50 | $9.95 |
| Family | FLEX 6000 / FLEX 6000A | FLEX 6000 |
| Logic Elements | 880 | β |
| Programmable I/O Pins | 71 | β |
| Package | 100-pin TQFP (14x14 mm, 0.5 mm pitch) | 100-pin TQFP (14 x 14 x 1.4 mm) |
| Speed Grade | -2 | -3 |
| Operating Temperature | Commercial (0C to +70C) | 0 Β°C to +70 Β°C (commercial) |
| Configuration Method | SRAM (volatile), in-system programmable | β |
| Programming Interface | IEEE 1149.1 (JTAG) / passive serial / EPC configuration device | β |
| Supply Voltage (VCCINT) | 5.0 V (FLEX 6000A); 3.3 V (FLEX 6000) | β |
| I/O Standards Supported | TTL, CMOS, PCI (with clamping diodes) | β |
| Number of LABs | [DATA_NEEDED: LAB count] | β |
| Embedded Memory | [DATA_NEEDED: embedded RAM blocks] | β |
| Global Clock Networks | [DATA_NEEDED: global clock count] | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 3 (168 hours) | 3 (168 hours) |
| Packaging | Tray (per Altera packing standard) | β |
| RoHS Status | [DATA_NEEDED: RoHS compliance] | Compliant |
| Logic Elements / Cells | β | 880 |
| Equivalent Gate Count | β | 10,000 gates |
| Logic Array Blocks (LABs) | β | 88 |
| User I/Os | β | 71 |
| Supply Voltage (Operating) | β | 3.0 V to 3.6 V |
| Maximum Internal Frequency | β | 142.86 MHz |
| Process Technology | β | 0.42 Β΅m CMOS |
| Programming Method | β | In-system SRAM via ByteBlaster/BitBlaster |