IAUC60N04S6L039ATMA1 vs BSC027N04LSGATMA1 Comparison
Detailed side-by-side comparison of IAUC60N04S6L039ATMA1 by Infineon and BSC027N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N04S6L039ATMA1
IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6L039ATMA1 β ActiveInfineon
BSC027N04LSGATMA1
BSC027N04LSGATMA1 - 40V 100A 2.7mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC027N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | IAUC60N04S6L039ATMA1 | BSC027N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.72 | $0.54 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 6 (trench) | OptiMOS 3 (Trench) |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D, T_C=25C) | 60 A | β |
| Pulsed Drain Current (I_DM) | 240 A | β |
| R_DS(on) max @ V_GS=10V | 3.9 milliohm | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (P_D) | 42 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | PG-TDSON-8 (SSO8) 5x6 mm | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant |
| Avalanche Rated | Yes (100% avalanche tested) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 3 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 40 V |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 24 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | β | 2.7 mΞ© |
| Power Dissipation (Ta=25Β°C) | β | 2.5 W |
| Power Dissipation (Tc=25Β°C) | β | 83 W |
| Operating Temperature Range | β | -55Β°C to +150Β°C |
| Halogen-Free | β | Yes |