IAUC60N04S6L039ATMA1 vs BSC039N06NSATMA1 Comparison
Detailed side-by-side comparison of IAUC60N04S6L039ATMA1 by Infineon and BSC039N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N04S6L039ATMA1
IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6L039ATMA1 β ActiveInfineon
BSC039N06NSATMA1
BSC039N06NSATMA1 - 60V 3.9mΞ© 100A OptiMOS 5 N-MOSFET | Infineon
BSC039N06NSATMA1 β ActiveSpecification Comparison
| Parameter | IAUC60N04S6L039ATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.72 | $0.46 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 6 (trench) | OptiMOS 5 (TrenchFET-style) |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D, T_C=25C) | 60 A | β |
| Pulsed Drain Current (I_DM) | 240 A | β |
| R_DS(on) max @ V_GS=10V | 3.9 milliohm | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (P_D) | 42 W | β |
| Operating Junction Temperature | -55C to +175C | -55C to +150C |
| Package | PG-TDSON-8 (SSO8) 5x6 mm | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant |
| Avalanche Rated | Yes (100% avalanche tested) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA | β | 19 A |
| Continuous Drain Current (ID) at TC | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulsed value at TC] |
| On-Resistance RDS(on) max at VGS=10V | β | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | β | 2.5 W |
| Power Dissipation at TC (PD) | β | 69 W |
| Number of Pins | β | 8 |
| Gate Drive Voltage (VGS) | β | Β±20 V max |