IAUC60N04S6L039ATMA1 vs IAUC120N04S6L005ATMA1 Comparison
Detailed side-by-side comparison of IAUC60N04S6L039ATMA1 by Infineon and IAUC120N04S6L005ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC60N04S6L039ATMA1
IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6L039ATMA1 β ActiveInfineon
IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΞ© N-Channel MOSFET | Infineon
IAUC120N04S6L005ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC60N04S6L039ATMA1 | IAUC120N04S6L005ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.72 | $0.92 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 6 (trench) | OptiMOS 6, N-Channel Trench MOSFET |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D, T_C=25C) | 60 A | β |
| Pulsed Drain Current (I_DM) | 240 A | β |
| R_DS(on) max @ V_GS=10V | 3.9 milliohm | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation (P_D) | 42 W | β |
| Operating Junction Temperature | -55C to +175C | -55 Β°C to +175 Β°C |
| Package | PG-TDSON-8 (SSO8) 5x6 mm | PG-TDSON-8-53 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Status | Compliant | Compliant |
| Avalanche Rated | Yes (100% avalanche tested) | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IAUC120N04S6L005ATMA1 |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 120 A (Tj) |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulse rating] |
| Power Dissipation (PD, Tc=25Β°C) | β | 187 W |
| RDS(on) max at VGS=10 V | β | 0.55 mΞ© at 60 A |
| RDS(on) max at VGS=4.5 V | β | 0.85 mΞ© |
| Gate-Source Voltage (VGS) | β | Β±16 V |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Total Gate Charge (Qg) | β | 177 nC at VGS=10 V |
| Input Capacitance (Ciss) | β | 11.203 nF at 25 V |
| Output Capacitance (Coss) | β | 2.982 nF |
| Reverse Transfer Capacitance (Crss) | β | 175 pF |