IAUCN04S7L019ATMA1 vs IAUC120N04S6L005ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L019ATMA1 by Infineon and IAUC120N04S6L005ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L019ATMA1 - 40V 1.91mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L019ATMA1 β ActiveInfineon
IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΞ© N-Channel MOSFET | Infineon
IAUC120N04S6L005ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7L019ATMA1 | IAUC120N04S6L005ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOSβ’ 7 | β |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (V<sub>DS</sub>) | 40 V | β |
| Continuous Drain Current (I<sub>D</sub>) | 120 A | β |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | 1.91 mΞ© | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th) typical/max value] | β |
| Gate Charge (Q<sub>g</sub>) | [DATA_NEEDED: Qg total/nominal value] | β |
| Package | PG-TDSON-8-33 | PG-TDSON-8-53 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55Β°C to +175Β°C (junction) | β |
| Power Dissipation (P<sub>D</sub>) | [DATA_NEEDED: Pd max at 25C] | β |
| Thermal Resistance Junction-to-Ambient | [DATA_NEEDED: RthJA value] | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Packaging | Tape & Reel (13-inch reel) | β |
| Standard Pack Quantity | 5000 pieces | β |
| Ordering Code Suffix | ATMA1 (Tape & Reel 13") | β |
| Part Number | β | IAUC120N04S6L005ATMA1 |
| Technology | β | OptiMOS 6, N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 120 A (Tj) |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulse rating] |
| Power Dissipation (PD, Tc=25Β°C) | β | 187 W |
| RDS(on) max at VGS=10 V | β | 0.55 mΞ© at 60 A |
| RDS(on) max at VGS=4.5 V | β | 0.85 mΞ© |
| Gate-Source Voltage (VGS) | β | Β±16 V |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Total Gate Charge (Qg) | β | 177 nC at VGS=10 V |
| Input Capacitance (Ciss) | β | 11.203 nF at 25 V |
| Output Capacitance (Coss) | β | 2.982 nF |
| Reverse Transfer Capacitance (Crss) | β | 175 pF |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |