IAUCN04S7L019ATMA1 vs IAUC60N04S6L039ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L019ATMA1 by Infineon and IAUC60N04S6L039ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L019ATMA1 - 40V 1.91mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L019ATMA1 β Active
Specification Comparison
| Parameter | IAUCN04S7L019ATMA1 | IAUC60N04S6L039ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.72 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOSβ’ 7 | β |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (V<sub>DS</sub>) | 40 V | β |
| Continuous Drain Current (I<sub>D</sub>) | 120 A | β |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | 1.91 mΞ© | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th) typical/max value] | β |
| Gate Charge (Q<sub>g</sub>) | [DATA_NEEDED: Qg total/nominal value] | β |
| Package | PG-TDSON-8-33 | PG-TDSON-8 (SSO8) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55Β°C to +175Β°C (junction) | β |
| Power Dissipation (P<sub>D</sub>) | [DATA_NEEDED: Pd max at 25C] | β |
| Thermal Resistance Junction-to-Ambient | [DATA_NEEDED: RthJA value] | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel (13-inch reel) | β |
| Standard Pack Quantity | 5000 pieces | β |
| Ordering Code Suffix | ATMA1 (Tape & Reel 13") | β |
| Technology | β | OptiMOS 6 (trench) |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D, T_C=25C) | β | 60 A |
| Pulsed Drain Current (I_DM) | β | 240 A |
| R_DS(on) max @ V_GS=10V | β | 3.9 milliohm |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Q_G) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P_D) | β | 42 W |
| Operating Junction Temperature | β | -55C to +175C |
| Avalanche Rated | β | Yes (100% avalanche tested) |