IAUCN08S7L018ATMA1 vs IAUC120N06S5L015ATMA1 Comparison

Detailed side-by-side comparison of IAUCN08S7L018ATMA1 by Infineon and IAUC120N06S5L015ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN08S7L018ATMA1

IAUCN08S7L018ATMA1 - 80V 1.8mΞ© OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L018ATMA1 βœ“ Active
Infineon
IAUC120N06S5L015ATMA1

IAUC120N06S5L015ATMA1 - 60V 1.5mΞ© OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN08S7L018ATMA1 IAUC120N06S5L015ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.55 $0.92
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 7 β€”
Technology N-Channel Trench MOSFET N-Channel MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) 80 V 60 V
Continuous Drain Current (ID) at Tj 210 A β€”
Continuous Drain Current (ID) at Tc [DATA_NEEDED: ID at Tc] β€”
Maximum RDS(on) at VGS=10 V 1.8 mΞ© β€”
Power Dissipation (PD) at Tc=25 Β°C 169 W β€”
Operating Temperature Range -55 Β°C to +175 Β°C -55C to +175C (Tj)
Package PG-TDSON-8-43 (5x6 mm) PG-TDSON-8-43 (Surface Mount)
Mounting Type Surface Mount Surface Mount (exposed pad)
Qualification Automotive (per Infineon part description) β€”
Gate Drive Voltage (typical) 10 V β€”
MSL Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
RoHS Status Compliant Compliant
Continuous Drain Current (ID, Tc=25C) β€” 235 A
On-Resistance RDS(on) max (VGS=10 V) β€” 1.5 mΞ©
Gate Charge (Qg, typ) β€” 88 nC
Power Dissipation (PD, Tc=25C) β€” 167 W
Automotive Qualification β€” AEC-Q101 qualified
Gate-Source Voltage (VGS) max β€” Β±20 V
Drain-Source On-State Resistance Test Conditions β€” VGS = 10 V, ID = 50 A
Typical Application β€” Automotive DC-DC, battery switches, motor drives

Datasheets & Resources

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