IAUZ30N06S5L140ATMA1 vs BSC039N06NSATMA1 Comparison
Detailed side-by-side comparison of IAUZ30N06S5L140ATMA1 by Infineon and BSC039N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon
IAUZ30N06S5L140ATMA1 β ActiveInfineon
BSC039N06NSATMA1
BSC039N06NSATMA1 - 60V 3.9mΞ© 100A OptiMOS 5 N-MOSFET | Infineon
BSC039N06NSATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ30N06S5L140ATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.96 | $0.46 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc) | 30 A (Tj) | β |
| Power Dissipation (PD, Tc) | 33 W | β |
| RDS(on) Max @ VGS=10 V | 14 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 2.2 V (typ) | β |
| Total Gate Charge (Qg) | 12.2 nC @ VGS=10 V | β |
| Output Capacitance (Coss) | 888 pF @ VDS=30 V | β |
| Package | PG-TSDSON-8-32 (S3O8, 3x3 mm) | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55C to +150C |
| Technology Family | OptiMOS 5 | β |
| Automotive Grade | AEC-Q101 qualified | β |
| Gate-Source Voltage Max | Β±20 V | β |
| Lead-Free / RoHS | Yes (RoHS compliant) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | β | 19 A |
| Continuous Drain Current (ID) at TC | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulsed value at TC] |
| On-Resistance RDS(on) max at VGS=10V | β | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | β | 2.5 W |
| Power Dissipation at TC (PD) | β | 69 W |
| Number of Pins | β | 8 |
| Gate Drive Voltage (VGS) | β | Β±20 V max |
| Technology | β | OptiMOS 5 (TrenchFET-style) |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| RoHS Status | β | Compliant |