IPB017N10N5LFATMA1 vs BSC027N04LSGATMA1 Comparison
Detailed side-by-side comparison of IPB017N10N5LFATMA1 by Infineon and BSC027N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB017N10N5LFATMA1
IPB017N10N5LFATMA1 - 100V 1.7mΞ© OptiMOS 5 Linear FET | Infineon
IPB017N10N5LFATMA1 β ActiveInfineon
BSC027N04LSGATMA1
BSC027N04LSGATMA1 - 40V 100A 2.7mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC027N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | IPB017N10N5LFATMA1 | BSC027N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.05 | $0.54 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 Linear FET | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide Semiconductor) | OptiMOS 3 (Trench) |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) @ TC=25C | 180 A | β |
| Continuous Drain Current (ID) @ TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) @ TC=25C | 313 W | β |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | 1.7 mΞ© (max) | β |
| Gate-Source Voltage (VGS) Max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Operating Temperature Range | -55C to +175C (junction) | -55Β°C to +150Β°C |
| Package / Case | PG-TO263-7 (D2PAK-7), surface mount | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | 1 |
| Avalanche Rated | Yes | β |
| Linear-Mode (SOA) Optimized | Yes (OptiMOS Linear FET) | β |
| Product Family | β | OptiMOS 3 |
| Transistor Type | β | N-Channel MOSFET |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 24 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 100 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 2.7 mΞ© |
| Power Dissipation (Ta=25Β°C) | β | 2.5 W |
| Power Dissipation (Tc=25Β°C) | β | 83 W |
| Package | β | PG-TDSON-8-1 (SuperSO8 5x6) |
| Halogen-Free | β | Yes |