IPB17N25S3100ATMA1 vs BSC027N04LSGATMA1 Comparison
Detailed side-by-side comparison of IPB17N25S3100ATMA1 by Infineon and BSC027N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC027N04LSGATMA1
BSC027N04LSGATMA1 - 40V 100A 2.7mΞ© OptiMOS 3 N-MOSFET | Infineon
BSC027N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | IPB17N25S3100ATMA1 | BSC027N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.84 | $0.54 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB17N25S3100ATMA1 | β |
| Transistor Type | N-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 250 V | 40 V |
| Continuous Drain Current (ID) at Tc | 17 A | β |
| Pulsed Drain Current (IDM) | 64 A | [DATA_NEEDED: pulsed drain current] |
| Drain-Source On-Resistance (RDS(on)) | 100 mOhm max @ VGS = 10 V | β |
| Typical RDS(on) | 19.3 mOhm (manufacturer trench-technology figure, per datasheet collateral) | β |
| Gate-Source Voltage (VGS) | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | 4 V | β |
| Total Gate Charge (Qg) | 19 nC @ VGS = 10 V | β |
| Input Capacitance (Ciss) | 1.5 nF | β |
| Output Capacitance (Coss) | 23 pF | β |
| Reverse Transfer Capacitance (Crss) | 625 pF | β |
| Power Dissipation (PD) | 107 W at Tc = 25 C | β |
| Operating Temperature Range | -55 C to +175 C | -55Β°C to +150Β°C |
| Package | PG-TO263-3-2 (D2PAK-2) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) | β |
| AEC-Q101 Qualification | Qualified (automotive grade) | β |
| Avalanche Rated | 100% avalanche tested | β |
| RoHS Status | Compliant (Green Product) | Compliant |
| Product Family | β | OptiMOS 3 |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 24 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 100 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 2.7 mΞ© |
| Power Dissipation (Ta=25Β°C) | β | 2.5 W |
| Power Dissipation (Tc=25Β°C) | β | 83 W |
| Technology | β | OptiMOS 3 (Trench) |
| MSL Level | β | 1 |
| Halogen-Free | β | Yes |