IPB17N25S3100ATMA1 vs IAUZ30N06S5L140ATMA1 Comparison
Detailed side-by-side comparison of IPB17N25S3100ATMA1 by Infineon and IAUZ30N06S5L140ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon
IAUZ30N06S5L140ATMA1 β ActiveSpecification Comparison
| Parameter | IPB17N25S3100ATMA1 | IAUZ30N06S5L140ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.84 | $0.96 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IPB17N25S3100ATMA1 | β |
| Transistor Type | N-Channel Enhancement Mode MOSFET | β |
| Drain-Source Voltage (VDS) | 250 V | 60 V |
| Continuous Drain Current (ID) at Tc | 17 A | β |
| Pulsed Drain Current (IDM) | 64 A | β |
| Drain-Source On-Resistance (RDS(on)) | 100 mOhm max @ VGS = 10 V | β |
| Typical RDS(on) | 19.3 mOhm (manufacturer trench-technology figure, per datasheet collateral) | β |
| Gate-Source Voltage (VGS) | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | 4 V | 2.2 V (typ) |
| Total Gate Charge (Qg) | 19 nC @ VGS = 10 V | 12.2 nC @ VGS=10 V |
| Input Capacitance (Ciss) | 1.5 nF | β |
| Output Capacitance (Coss) | 23 pF | 888 pF @ VDS=30 V |
| Reverse Transfer Capacitance (Crss) | 625 pF | β |
| Power Dissipation (PD) | 107 W at Tc = 25 C | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Package | PG-TO263-3-2 (D2PAK-2) | PG-TSDSON-8-32 (S3O8, 3x3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) | β |
| AEC-Q101 Qualification | Qualified (automotive grade) | β |
| Avalanche Rated | 100% avalanche tested | β |
| RoHS Status | Compliant (Green Product) | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID, Tc) | β | 30 A (Tj) |
| Power Dissipation (PD, Tc) | β | 33 W |
| RDS(on) Max @ VGS=10 V | β | 14 mΞ© |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| Technology Family | β | OptiMOS 5 |
| Automotive Grade | β | AEC-Q101 qualified |
| Gate-Source Voltage Max | β | Β±20 V |
| Lead-Free / RoHS | β | Yes (RoHS compliant) |