IPD30N08S2L21ATMA1 vs IPD35N10S3L26ATMA1 Comparison
Detailed side-by-side comparison of IPD30N08S2L21ATMA1 by Infineon and IPD35N10S3L26ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 β ActiveInfineon
IPD35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPD35N10S3L26ATMA1 β ActiveSpecification Comparison
| Parameter | IPD30N08S2L21ATMA1 | IPD35N10S3L26ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 75 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 30 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 180 A |
| On-State Resistance (RDS(on)) at VGS=10 V | 26 milliohm (typ) | β |
| Gate Threshold Voltage (VGS(th)) | Logic-level (L series) | β |
| Gate Charge (Qg) typ | 56 nC | β |
| Power Dissipation (PD) at Tc=25C | 136 W | β |
| Operating Temperature Range | -55C to +175C | β |
| Maximum Junction Temperature | +175C | β |
| Package | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK-2) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Drain tab + Gate + Source) | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Status | Compliant | β |
| MSL Level | 1 | MSL1 (up to 260Β°C peak reflow) |
| Part Number | β | IPD35N10S3L26ATMA1 |
| Technology | β | OptiMOS-T (N-channel enhancement mode trench MOSFET) |
| Continuous Drain Current (ID) at TC=25Β°C | β | 35 A |
| On-Resistance RDS(on) max at VGS=10 V | β | 26 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | β | 1.7 V |
| Continuous Power Dissipation (PD) at TC=25Β°C | β | 71 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| Avalanche Tested | β | 100% avalanche tested |
| RoHS / Halogen-Free | β | RoHS compliant, Green product (halogen-free) |
| Typical Gate Charge (Qg) | β | [DATA_NEEDED: typical Qg from datasheet] |