IPD35N10S3L26ATMA1 vs IPD30N08S2L21ATMA1 Comparison
Detailed side-by-side comparison of IPD35N10S3L26ATMA1 by Infineon and IPD30N08S2L21ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPD35N10S3L26ATMA1 β ActiveInfineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 β ActiveSpecification Comparison
| Parameter | IPD35N10S3L26ATMA1 | IPD30N08S2L21ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD35N10S3L26ATMA1 | β |
| Technology | OptiMOS-T (N-channel enhancement mode trench MOSFET) | β |
| Drain-Source Voltage (VDS) | 100 V | 75 V |
| Continuous Drain Current (ID) at TC=25Β°C | 35 A | β |
| Pulsed Drain Current (IDM) | 180 A | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10 V | 26 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | 1.7 V | β |
| Continuous Power Dissipation (PD) at TC=25Β°C | 71 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK-2) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260Β°C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Avalanche Tested | 100% avalanche tested | β |
| RoHS / Halogen-Free | RoHS compliant, Green product (halogen-free) | β |
| Typical Gate Charge (Qg) | [DATA_NEEDED: typical Qg from datasheet] | β |
| Series | β | OptiMOS |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | β | 30 A |
| On-State Resistance (RDS(on)) at VGS=10 V | β | 26 milliohm (typ) |
| Gate Threshold Voltage (VGS(th)) | β | Logic-level (L series) |
| Gate Charge (Qg) typ | β | 56 nC |
| Power Dissipation (PD) at Tc=25C | β | 136 W |
| Operating Temperature Range | β | -55C to +175C |
| Maximum Junction Temperature | β | +175C |
| Pin Count | β | 3 (Drain tab + Gate + Source) |
| RoHS Status | β | Compliant |