IPD60N10S412ATMA1 vs IAUC120N06S5L015ATMA1 Comparison
Detailed side-by-side comparison of IPD60N10S412ATMA1 by Infineon and IAUC120N06S5L015ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD60N10S412ATMA1 - 100V 60A N-Channel MOSFET | Infineon | Auto
IPD60N10S412ATMA1 β ActiveInfineon
IAUC120N06S5L015ATMA1
IAUC120N06S5L015ATMA1 - 60V 1.5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 β ActiveSpecification Comparison
| Parameter | IPD60N10S412ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.92 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IPD60N10S412ATMA1 | β |
| Transistor Type | N-Channel MOSFET, Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID, TC=25C) | 60 A | β |
| Power Dissipation (PD, TC=25C) | 94 W | β |
| RDS(on) Max @ VGS=10V | 12.2 mOhm | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TO252-3-313 (DPAK) | PG-TDSON-8-43 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount (exposed pad) |
| Pin Count | 3 (2 + Tab) | β |
| MSL Level | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Peak Reflow Temperature | 260 C | β |
| AEC-Q101 Qualification | Qualified (Automotive Grade) | β |
| RoHS Status | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% Avalanche Tested | β |
| Halogen-Free | Yes (per Infineon definition) | β |
| Technology | β | N-Channel MOSFET (OptiMOS 5) |
| Continuous Drain Current (ID, Tc=25C) | β | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | β | 1.5 mΞ© |
| Gate Charge (Qg, typ) | β | 88 nC |
| Power Dissipation (PD, Tc=25C) | β | 167 W |
| Operating Temperature Range | β | -55C to +175C (Tj) |
| Automotive Qualification | β | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Drain-Source On-State Resistance Test Conditions | β | VGS = 10 V, ID = 50 A |
| Typical Application | β | Automotive DC-DC, battery switches, motor drives |