IRF640NPBF vs IRLZ44NPBF Comparison
Detailed side-by-side comparison of IRF640NPBF by Infineon and IRLZ44NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF640NPBF | IRLZ44NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.25 | $0.68 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID) at Tc | 18 A | β |
| Power Dissipation (PD) at Tc | 150 W | β |
| On-Resistance RDS(on) max at VGS=10V | 150 mOhm | β |
| Total Gate Charge (Qg) | 44.7 nC | 32 nC |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Technology | HEXFET (5th Generation) | HEXFET (advanced process) |
| Package | TO-220AB (through-hole) | TO-220AB (through-hole, 3 leads) |
| Operating Junction Temperature | -55 C to +150 C | -55 Β°C to +175 Β°C |
| Avalanche Energy Rated | Yes | β |
| dv/dt Ruggedness | Yes (dynamic rated) | β |
| Mounting Type | Through-Hole (TO-220 tab) | Through Hole |
| Configuration | Single N-Channel MOSFET | β |
| RoHS Status | Compliant (PBF suffix) | Compliant |
| Lead Finish | Lead-free (PBF) | β |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Continuous Drain Current (ID) at TC=25Β°C | β | 47 A |
| Pulsed Drain Current (IDM) | β | 160 A |
| Gate-to-Source Voltage (VGS) Max | β | Β±16 V |
| Gate Threshold Voltage (VGS(th)) | β | 1.0 V to 2.0 V (typ 1.5 V) |
| Static Drain-to-Source On-Resistance (RDS(on)) | β | 22 mΞ© max at VGS=5V, ID=25A |
| Power Dissipation (PD) at TC=25Β°C | β | 110 W |
| Power Dissipation (PD) at TA=25Β°C | β | 3.8 W |
| Thermal Resistance Junction-to-Case (RΞΈJC) | β | 1.4 Β°C/W |
| Logic-Level Gate Drive | β | Yes (fully enhanced at VGS=5V) |