IRF7205TRPBF vs IRFR9024NTRLPBF Comparison

Detailed side-by-side comparison of IRF7205TRPBF by Infineon and IRFR9024NTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR9024NTRLPBF IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF βœ“ Active

Specification Comparison

Parameter IRF7205TRPBF IRFR9024NTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.18 $0.32
FET Type P-Channel MOSFET β€”
Technology IR HEXFET (4th generation) HEXFET (Generation 5)
Drain-to-Source Voltage (VDS) -30 V β€”
Continuous Drain Current (ID) at TA=25Β°C -4.6 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] β€”
On-Resistance RDS(on) max @ VGS=-10V 70 mΞ© β€”
On-Resistance RDS(on) max @ VGS=-4.5V 130 mΞ© β€”
Gate Threshold Voltage VGS(th) -1.0 V to -3.0 V β€”
Total Gate Charge Qg 27 nC β€”
Power Dissipation (TC=25Β°C) 2.5 W β€”
Operating Junction Temperature -55 Β°C to +150 Β°C β€”
Package SO-8 (8-SO) β€”
Mounting Type Surface Mount Surface Mount
RoHS / Lead-Free Lead-Free (PBF suffix), RoHS compliant β€”
Packaging Tape & Reel (TR suffix) β€”
Polarity β€” P-Channel
MOSFET Operating Mode β€” Enhancement
Drain-Source Voltage (VDS) β€” -55 V
Continuous Drain Current (ID) at TC=25C β€” -11 A
On-Resistance RDS(on) max at VGS=-10V β€” 175 mOhm
Gate-Source Voltage (VGS) max β€” +/-20 V
Power Dissipation (PD) at TC=25C β€” 38 W
Gate Charge (Qg) typical β€” 12.7 nC
Package Type β€” TO-252AA (DPAK)
Pin Count β€” 3 (Drain, Gate, Source + Tab)
Operating Temperature Range β€” -55C to +175C
Lead-Free / RoHS β€” Yes (LPBF suffix)
Reel Orientation β€” Left (TRL suffix)

Datasheets & Resources

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